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Combinatorial Approaches to Understanding Polytypism in III-V Nanowires.

Johansson, Jonas LU ; Bolinsson, Jessica LU ; Ek, Martin; Caroff, Philippe and Dick Thelander, Kimberly LU (2012) In ACS Nano 6(7). p.6142-6149
Abstract
Polytypism in III-V semiconductor nanowires is a topic that has received considerable attention in recent years. Achieving a pure nanowire crystal phase requires well-controlled and advanced parameter tuning for most III-V materials. Additionally, the new and unusual phases sometimes observed may present unique material properties if they can be controllably fabricated. With the prospect of using nanowires in applications within several different fields (including electronics, photonics, and life science), theoretical models are necessary to explain experimental trends and to attain a high level of crystal phase control. At present, there is no theoretical model (or combination of models) that fully explains how and why nanowire crystal... (More)
Polytypism in III-V semiconductor nanowires is a topic that has received considerable attention in recent years. Achieving a pure nanowire crystal phase requires well-controlled and advanced parameter tuning for most III-V materials. Additionally, the new and unusual phases sometimes observed may present unique material properties if they can be controllably fabricated. With the prospect of using nanowires in applications within several different fields (including electronics, photonics, and life science), theoretical models are necessary to explain experimental trends and to attain a high level of crystal phase control. At present, there is no theoretical model (or combination of models) that fully explains how and why nanowire crystal structures commonly include several different polytypes. Here we use combinatorics and interlayer interactions to include higher order polytypes (4H and 6H) with the aim to explain nanowire crystal structure beyond the well-investigated zinc blende-wurtzite polytypism. Predictions from our theoretical models compare well with experimental results. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
ACS Nano
volume
6
issue
7
pages
6142 - 6149
publisher
The American Chemical Society
external identifiers
  • wos:000306673800045
  • pmid:22681568
  • scopus:84864242537
ISSN
1936-086X
DOI
10.1021/nn301477x
language
English
LU publication?
yes
id
32b898dd-d037-49b6-8cce-b479d0e4e035 (old id 2859636)
date added to LUP
2012-08-06 11:46:13
date last changed
2017-06-04 03:10:01
@article{32b898dd-d037-49b6-8cce-b479d0e4e035,
  abstract     = {Polytypism in III-V semiconductor nanowires is a topic that has received considerable attention in recent years. Achieving a pure nanowire crystal phase requires well-controlled and advanced parameter tuning for most III-V materials. Additionally, the new and unusual phases sometimes observed may present unique material properties if they can be controllably fabricated. With the prospect of using nanowires in applications within several different fields (including electronics, photonics, and life science), theoretical models are necessary to explain experimental trends and to attain a high level of crystal phase control. At present, there is no theoretical model (or combination of models) that fully explains how and why nanowire crystal structures commonly include several different polytypes. Here we use combinatorics and interlayer interactions to include higher order polytypes (4H and 6H) with the aim to explain nanowire crystal structure beyond the well-investigated zinc blende-wurtzite polytypism. Predictions from our theoretical models compare well with experimental results.},
  author       = {Johansson, Jonas and Bolinsson, Jessica and Ek, Martin and Caroff, Philippe and Dick Thelander, Kimberly},
  issn         = {1936-086X},
  language     = {eng},
  number       = {7},
  pages        = {6142--6149},
  publisher    = {The American Chemical Society},
  series       = {ACS Nano},
  title        = {Combinatorial Approaches to Understanding Polytypism in III-V Nanowires.},
  url          = {http://dx.doi.org/10.1021/nn301477x},
  volume       = {6},
  year         = {2012},
}