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The VO2* defect in silicon

Lindström, Lennart LU ; Murin, LI; Svensson, BG; Markevich, VP and Hallberg, T (2003) In Physica B: Condensed Matter 340. p.509-513
Abstract
The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400degreesC. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these 0 atoms give rise to one infrared absorption band at 895.5 cm(-1) at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second 0 atom is in a backbond position. Two vibrational 2 bands, at 928.4 and 1003.8 cm(-1) (positions at 15 K), are assigned to this configuration. (C) 2003 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
vacancy-dioxygen, silicon, defects, LVMs
in
Physica B: Condensed Matter
volume
340
pages
509 - 513
publisher
Elsevier
external identifiers
  • wos:000188300200103
  • scopus:0347134678
ISSN
0921-4526
DOI
language
English
LU publication?
yes
id
f7959b29-b974-43db-aba8-b35c16cda405 (old id 288919)
date added to LUP
2007-09-17 10:35:43
date last changed
2018-05-29 11:06:50
@article{f7959b29-b974-43db-aba8-b35c16cda405,
  abstract     = {The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400degreesC. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these 0 atoms give rise to one infrared absorption band at 895.5 cm(-1) at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second 0 atom is in a backbond position. Two vibrational 2 bands, at 928.4 and 1003.8 cm(-1) (positions at 15 K), are assigned to this configuration. (C) 2003 Elsevier B.V. All rights reserved.},
  author       = {Lindström, Lennart and Murin, LI and Svensson, BG and Markevich, VP and Hallberg, T},
  issn         = {0921-4526},
  keyword      = {vacancy-dioxygen,silicon,defects,LVMs},
  language     = {eng},
  pages        = {509--513},
  publisher    = {Elsevier},
  series       = {Physica B: Condensed Matter},
  title        = {The VO2* defect in silicon},
  url          = {http://dx.doi.org/},
  volume       = {340},
  year         = {2003},
}