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Interaction between localized and extended modes of oxygen in silicon

McCluskey, MD; Hsu, L and Lindström, Lennart LU (2003) In Physica B: Condensed Matter 340. p.514-517
Abstract
The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes (LVMs) decay into phonons. In this study, we have investigated interstitial oxygen (O-i) in silicon as a model 'laboratory' for such local-extended mode interactions. Using hydrostatic pressure and infrared spectroscopy, we brought the stretch mode of O-18(i) in silicon into resonance with a second harmonic of the O-18(i) resonant mode. The resonant interaction results in an avoided crossing between the modes. In addition to this anti-crossing behaviour, the line width abruptly increases, due to a dramatic decrease in lifetime as the LVM enters the two-phonon continuum. A model of the interaction... (More)
The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes (LVMs) decay into phonons. In this study, we have investigated interstitial oxygen (O-i) in silicon as a model 'laboratory' for such local-extended mode interactions. Using hydrostatic pressure and infrared spectroscopy, we brought the stretch mode of O-18(i) in silicon into resonance with a second harmonic of the O-18(i) resonant mode. The resonant interaction results in an avoided crossing between the modes. In addition to this anti-crossing behaviour, the line width abruptly increases, due to a dramatic decrease in lifetime as the LVM enters the two-phonon continuum. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and line widths. (C) 2003 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
pressure, local vibrational modes, silicon, oxygen
in
Physica B: Condensed Matter
volume
340
pages
514 - 517
publisher
Elsevier
external identifiers
  • wos:000188300200104
  • scopus:0347764774
ISSN
0921-4526
DOI
10.1016/j.physb.2003.09.145
language
English
LU publication?
yes
id
753f8a9b-9c13-4cc3-8b76-12b6124c147a (old id 288925)
date added to LUP
2007-09-18 11:53:28
date last changed
2018-01-07 09:31:26
@article{753f8a9b-9c13-4cc3-8b76-12b6124c147a,
  abstract     = {The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes (LVMs) decay into phonons. In this study, we have investigated interstitial oxygen (O-i) in silicon as a model 'laboratory' for such local-extended mode interactions. Using hydrostatic pressure and infrared spectroscopy, we brought the stretch mode of O-18(i) in silicon into resonance with a second harmonic of the O-18(i) resonant mode. The resonant interaction results in an avoided crossing between the modes. In addition to this anti-crossing behaviour, the line width abruptly increases, due to a dramatic decrease in lifetime as the LVM enters the two-phonon continuum. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and line widths. (C) 2003 Elsevier B.V. All rights reserved.},
  author       = {McCluskey, MD and Hsu, L and Lindström, Lennart},
  issn         = {0921-4526},
  keyword      = {pressure,local vibrational modes,silicon,oxygen},
  language     = {eng},
  pages        = {514--517},
  publisher    = {Elsevier},
  series       = {Physica B: Condensed Matter},
  title        = {Interaction between localized and extended modes of oxygen in silicon},
  url          = {http://dx.doi.org/10.1016/j.physb.2003.09.145},
  volume       = {340},
  year         = {2003},
}