Double Nanowires for Hybrid Quantum Devices
(2022) In Advanced Functional Materials 32(9).- Abstract
Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method... (More)
Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half-shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated.
(Less)
- author
- organization
- publishing date
- 2022
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- hybrid semiconductor-superconductor nanomaterials, parallel nanowires, quantum materials, semiconductor nanowires
- in
- Advanced Functional Materials
- volume
- 32
- issue
- 9
- article number
- 2107926
- publisher
- Wiley-Blackwell
- external identifiers
-
- scopus:85119479939
- ISSN
- 1616-301X
- DOI
- 10.1002/adfm.202107926
- language
- English
- LU publication?
- yes
- id
- 28c2571d-06b4-4981-ac68-0ee9438613f9
- date added to LUP
- 2021-12-08 15:22:53
- date last changed
- 2023-11-09 01:19:45
@article{28c2571d-06b4-4981-ac68-0ee9438613f9, abstract = {{<p>Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half-shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated.</p>}}, author = {{Kanne, Thomas and Olsteins, Dags and Marnauza, Mikelis and Vekris, Alexandros and Estrada Saldaña, Juan Carlos and Loric̀, Sara and Schlosser, Rasmus D. and Ross, Daniel and Csonka, Szabolcs and Grove-Rasmussen, Kasper and Nygård, Jesper}}, issn = {{1616-301X}}, keywords = {{hybrid semiconductor-superconductor nanomaterials; parallel nanowires; quantum materials; semiconductor nanowires}}, language = {{eng}}, number = {{9}}, publisher = {{Wiley-Blackwell}}, series = {{Advanced Functional Materials}}, title = {{Double Nanowires for Hybrid Quantum Devices}}, url = {{http://dx.doi.org/10.1002/adfm.202107926}}, doi = {{10.1002/adfm.202107926}}, volume = {{32}}, year = {{2022}}, }