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A study of the surface structure and composition of annealed Ga0.96Mn0.04As(100)

Mikkelsen, Anders LU ; Gustafson, Johan LU ; Sadowski, J; Andersen, Jesper N LU ; Kanski, J and Lundgren, Edvin LU (2004) In Applied Surface Science 222(1-4). p.23-32
Abstract
The surface structure and chemical composition of annealed Ga0.96Mn0.04As(1 0 0) have been studied by scanning tunneling microscopy (STM), auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The samples were As capped and subsequently transferred in-air from the MBE system to the STM chamber. After annealing to 600 K it is found that the Mn segregates to the surface and forms a compound, which is stable up to annealing temperatures of 790 K. For annealing temperatures above 825 K a well-ordered phase exists signified by a LEED pattern consisting of a superposition of a (1 x 6) and a (4 x 2) pattern. LEED and STM measurements demonstrate that the surface is dominated by (1 x 6) domains coexisting with small patches... (More)
The surface structure and chemical composition of annealed Ga0.96Mn0.04As(1 0 0) have been studied by scanning tunneling microscopy (STM), auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The samples were As capped and subsequently transferred in-air from the MBE system to the STM chamber. After annealing to 600 K it is found that the Mn segregates to the surface and forms a compound, which is stable up to annealing temperatures of 790 K. For annealing temperatures above 825 K a well-ordered phase exists signified by a LEED pattern consisting of a superposition of a (1 x 6) and a (4 x 2) pattern. LEED and STM measurements demonstrate that the surface is dominated by (1 x 6) domains coexisting with small patches of (4 x 2) domains. By comparing the STM images of the high temperature phase found on Ga0.96Mn0.04As(1 0 0) with the high temperature phases found on ordinary GaAs(1 0 0), we demonstrate differences between annealed Ga0.96Mn0.04As(1 0 0) and GaAs(1 0 0) in both surface morphology and atomic structure. We argue that the Ga0.96Mn0.04As surface is more As rich than the GaAs surface prepared in a similar fashion. Reasons for these differences are discussed. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
manganese, GaMnAs, GaAs, AES, STM, LEED, surface, structure
in
Applied Surface Science
volume
222
issue
1-4
pages
23 - 32
publisher
Elsevier
external identifiers
  • wos:000187943300005
  • scopus:0348014456
ISSN
1873-5584
DOI
10.1016/S0169-4332(03)00964-4
language
English
LU publication?
yes
id
ec7f847c-149a-4f22-aee6-bc6bb893e506 (old id 290878)
date added to LUP
2007-08-03 14:13:28
date last changed
2017-01-01 04:54:05
@article{ec7f847c-149a-4f22-aee6-bc6bb893e506,
  abstract     = {The surface structure and chemical composition of annealed Ga0.96Mn0.04As(1 0 0) have been studied by scanning tunneling microscopy (STM), auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The samples were As capped and subsequently transferred in-air from the MBE system to the STM chamber. After annealing to 600 K it is found that the Mn segregates to the surface and forms a compound, which is stable up to annealing temperatures of 790 K. For annealing temperatures above 825 K a well-ordered phase exists signified by a LEED pattern consisting of a superposition of a (1 x 6) and a (4 x 2) pattern. LEED and STM measurements demonstrate that the surface is dominated by (1 x 6) domains coexisting with small patches of (4 x 2) domains. By comparing the STM images of the high temperature phase found on Ga0.96Mn0.04As(1 0 0) with the high temperature phases found on ordinary GaAs(1 0 0), we demonstrate differences between annealed Ga0.96Mn0.04As(1 0 0) and GaAs(1 0 0) in both surface morphology and atomic structure. We argue that the Ga0.96Mn0.04As surface is more As rich than the GaAs surface prepared in a similar fashion. Reasons for these differences are discussed.},
  author       = {Mikkelsen, Anders and Gustafson, Johan and Sadowski, J and Andersen, Jesper N and Kanski, J and Lundgren, Edvin},
  issn         = {1873-5584},
  keyword      = {manganese,GaMnAs,GaAs,AES,STM,LEED,surface,structure},
  language     = {eng},
  number       = {1-4},
  pages        = {23--32},
  publisher    = {Elsevier},
  series       = {Applied Surface Science},
  title        = {A study of the surface structure and composition of annealed Ga0.96Mn0.04As(100)},
  url          = {http://dx.doi.org/10.1016/S0169-4332(03)00964-4},
  volume       = {222},
  year         = {2004},
}