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Stable hydrogen pair trapped at carbon impurities in silicon

Markevich, VP; Hourahine, B; Newman, RC; Jones, R; Kleverman, Mats LU ; Lindström, Lennart LU ; Murin, LI; Suezawa, M; Oberg, S and Briddon, PR (2003) In Defect and Diffusion Forum 221-2. p.1-9
Abstract
Local mode spectroscopy and ab initio modeling are used to investigate two trigonal defects found in carbon rich Si into which H had been in-diffused. Isotopic shifts with D and C-13 are reported along with the effect of uniaxial stress. Ab-initio modeling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed experimentally. The defects are energetically favorable in comparison with separated C-s and H-2 in Si and may represent aggregation sites for hydrogen.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
impurity complexes, hydrogen, absorption bands, carbon, silicon
in
Defect and Diffusion Forum
volume
221-2
pages
1 - 9
publisher
Trans Tech Publications Ltd
external identifiers
  • wos:000187678500001
  • scopus:10744222348
ISSN
1012-0386
language
English
LU publication?
yes
id
c7152cac-855d-4424-9177-4dd1636254c7 (old id 291096)
alternative location
http://www.scientific.net/3-908450-83-7/
date added to LUP
2007-09-18 07:22:49
date last changed
2018-01-07 09:20:05
@article{c7152cac-855d-4424-9177-4dd1636254c7,
  abstract     = {Local mode spectroscopy and ab initio modeling are used to investigate two trigonal defects found in carbon rich Si into which H had been in-diffused. Isotopic shifts with D and C-13 are reported along with the effect of uniaxial stress. Ab-initio modeling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed experimentally. The defects are energetically favorable in comparison with separated C-s and H-2 in Si and may represent aggregation sites for hydrogen.},
  author       = {Markevich, VP and Hourahine, B and Newman, RC and Jones, R and Kleverman, Mats and Lindström, Lennart and Murin, LI and Suezawa, M and Oberg, S and Briddon, PR},
  issn         = {1012-0386},
  keyword      = {impurity complexes,hydrogen,absorption bands,carbon,silicon},
  language     = {eng},
  pages        = {1--9},
  publisher    = {Trans Tech Publications Ltd},
  series       = {Defect and Diffusion Forum},
  title        = {Stable hydrogen pair trapped at carbon impurities in silicon},
  volume       = {221-2},
  year         = {2003},
}