Advanced

Donor states in modulation-doped Si/SiGe heterostructures

Blom, Anders LU ; Odnoblyudov, MA; Yassievich, IN and Chao, Koung-An LU (2003) In Physical Review B (Condensed Matter and Materials Physics) 68(16: 165338).
Abstract
We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also the energy width of the resonant states which may appear when a localized state becomes degenerate with the continuous quantum well subbands. The approach is nonvariational, and we are therefore also able to evaluate the wave functions. This is used to calculate the optical absorption spectrum, which is strongly nonisotropic due to the selection rules. The results obtained from calculations for Si/Si1-xGex quantum wells allow us to present the general behavior of the impurity states, as the donor position... (More)
We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also the energy width of the resonant states which may appear when a localized state becomes degenerate with the continuous quantum well subbands. The approach is nonvariational, and we are therefore also able to evaluate the wave functions. This is used to calculate the optical absorption spectrum, which is strongly nonisotropic due to the selection rules. The results obtained from calculations for Si/Si1-xGex quantum wells allow us to present the general behavior of the impurity states, as the donor position is varied from the center of the well to deep inside the barrier. The influence on the donor ground state from both the central-cell effect and the strain arising from the lattice mismatch is carefully considered. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
68
issue
16: 165338
publisher
American Physical Society
external identifiers
  • wos:000186571800069
  • scopus:4444316523
ISSN
1098-0121
DOI
10.1103/PhysRevB.68.165338
language
English
LU publication?
yes
id
5f236db9-1df3-4a7c-a3db-b1511a50cb21 (old id 294850)
date added to LUP
2007-08-24 12:07:45
date last changed
2017-04-23 04:29:46
@article{5f236db9-1df3-4a7c-a3db-b1511a50cb21,
  abstract     = {We present a unified approach for calculating the properties of shallow donors inside or outside heterostructure quantum wells. The method allows us to obtain not only the binding energies of all localized states of any symmetry, but also the energy width of the resonant states which may appear when a localized state becomes degenerate with the continuous quantum well subbands. The approach is nonvariational, and we are therefore also able to evaluate the wave functions. This is used to calculate the optical absorption spectrum, which is strongly nonisotropic due to the selection rules. The results obtained from calculations for Si/Si1-xGex quantum wells allow us to present the general behavior of the impurity states, as the donor position is varied from the center of the well to deep inside the barrier. The influence on the donor ground state from both the central-cell effect and the strain arising from the lattice mismatch is carefully considered.},
  author       = {Blom, Anders and Odnoblyudov, MA and Yassievich, IN and Chao, Koung-An},
  issn         = {1098-0121},
  language     = {eng},
  number       = {16: 165338},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Donor states in modulation-doped Si/SiGe heterostructures},
  url          = {http://dx.doi.org/10.1103/PhysRevB.68.165338},
  volume       = {68},
  year         = {2003},
}