Characterization of Nanowire Devices Using Nano-Focused X-Ray Beams
(2019) 2019 Compound Semiconductor Week, CSW 2019- Abstract
The long absorption length of hard X-rays makes them ideal tools for investigating electronic and optoelectronic devices in realistic operational conditions. Modern X-ray optics reach the relevant length scales for single nanoelectronic devices. Here, methods to investigate single nanowire devices with nanofocused X-rays are discussed. The X-rays are used both as pump and probe of semiconductor nanowire devices. Nanofocused X-ray diffraction was used to quantify bending and lattice tilt in strained core-shell nanowires as well as electrically biased nanowire devices. The carrier collection in single solar cell nanowires was probed with X-ray beam induced current. X-ray fluorescence mapping at 50 nm spatial resolution of Zn doping in... (More)
The long absorption length of hard X-rays makes them ideal tools for investigating electronic and optoelectronic devices in realistic operational conditions. Modern X-ray optics reach the relevant length scales for single nanoelectronic devices. Here, methods to investigate single nanowire devices with nanofocused X-rays are discussed. The X-rays are used both as pump and probe of semiconductor nanowire devices. Nanofocused X-ray diffraction was used to quantify bending and lattice tilt in strained core-shell nanowires as well as electrically biased nanowire devices. The carrier collection in single solar cell nanowires was probed with X-ray beam induced current. X-ray fluorescence mapping at 50 nm spatial resolution of Zn doping in solar cell nanowires revealed background doping and long gradients. The demonstrated methods are relevant for a wide range of nanoscale semiconductor devices.
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- author
- Wallentin, Jesper LU
- organization
- publishing date
- 2019-05-01
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Nanowire, X-ray
- host publication
- 2019 Compound Semiconductor Week, CSW 2019 - Proceedings
- article number
- 8819276
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2019 Compound Semiconductor Week, CSW 2019
- conference location
- Nara, Japan
- conference dates
- 2019-05-19 - 2019-05-23
- external identifiers
-
- scopus:85072961458
- ISBN
- 9781728100807
- DOI
- 10.1109/ICIPRM.2019.8819276
- language
- English
- LU publication?
- yes
- id
- 2becb0cb-d477-4491-a611-220eeb2588c2
- date added to LUP
- 2019-10-18 08:47:47
- date last changed
- 2023-10-21 21:45:30
@inproceedings{2becb0cb-d477-4491-a611-220eeb2588c2,
abstract = {{<p>The long absorption length of hard X-rays makes them ideal tools for investigating electronic and optoelectronic devices in realistic operational conditions. Modern X-ray optics reach the relevant length scales for single nanoelectronic devices. Here, methods to investigate single nanowire devices with nanofocused X-rays are discussed. The X-rays are used both as pump and probe of semiconductor nanowire devices. Nanofocused X-ray diffraction was used to quantify bending and lattice tilt in strained core-shell nanowires as well as electrically biased nanowire devices. The carrier collection in single solar cell nanowires was probed with X-ray beam induced current. X-ray fluorescence mapping at 50 nm spatial resolution of Zn doping in solar cell nanowires revealed background doping and long gradients. The demonstrated methods are relevant for a wide range of nanoscale semiconductor devices.</p>}},
author = {{Wallentin, Jesper}},
booktitle = {{2019 Compound Semiconductor Week, CSW 2019 - Proceedings}},
isbn = {{9781728100807}},
keywords = {{Nanowire; X-ray}},
language = {{eng}},
month = {{05}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
title = {{Characterization of Nanowire Devices Using Nano-Focused X-Ray Beams}},
url = {{http://dx.doi.org/10.1109/ICIPRM.2019.8819276}},
doi = {{10.1109/ICIPRM.2019.8819276}},
year = {{2019}},
}