Advanced

Sn-seeded GaAs nanowires grown by MOVPE

Sun, Rong LU ; Vainorius, Neimantas LU ; Jacobsson, Daniel LU ; Pistol, Mats-Erik LU ; Lehmann, Sebastian LU and Dick, Kimberly LU (2016) In Nanotechnology 27(21).
Abstract
It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p–n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved in a broad temperature window by changing the TMGa precursor flow simultaneously with decreasing temperature to prevent nanowire kinking at low temperatures. We find that changes in the supply of both AsH3 and TMGa can lead to nanowire kinking and that the formation of twin planes is closely related to a low V/III ratio. From PL results, we... (More)
It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p–n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved in a broad temperature window by changing the TMGa precursor flow simultaneously with decreasing temperature to prevent nanowire kinking at low temperatures. We find that changes in the supply of both AsH3 and TMGa can lead to nanowire kinking and that the formation of twin planes is closely related to a low V/III ratio. From PL results, we observe an increase of the average luminescence energy induced by heavy doping which shifts the Fermi level into the conduction band. Furthermore, the doping level of Sn and C is dependent on both the temperature and the V/III ratio. These results indicate that using Sn as the seed particle for nanowire growth is quite different from traditionally used Au in for example growth conditions and resulting nanowire properties. Thus, it is very interesting to explore alternative metal seed particles with controllable introduction of other impurities. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
27
issue
21
publisher
IOP Publishing
external identifiers
  • scopus:84964714295
  • wos:000374507600016
ISSN
0957-4484
DOI
10.1088/0957-4484/27/21/215603
language
English
LU publication?
yes
id
2c8440e0-c734-49a4-b43b-969e3034df47
date added to LUP
2016-08-31 16:29:51
date last changed
2017-03-19 04:35:18
@article{2c8440e0-c734-49a4-b43b-969e3034df47,
  abstract     = {It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p–n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved in a broad temperature window by changing the TMGa precursor flow simultaneously with decreasing temperature to prevent nanowire kinking at low temperatures. We find that changes in the supply of both AsH3 and TMGa can lead to nanowire kinking and that the formation of twin planes is closely related to a low V/III ratio. From PL results, we observe an increase of the average luminescence energy induced by heavy doping which shifts the Fermi level into the conduction band. Furthermore, the doping level of Sn and C is dependent on both the temperature and the V/III ratio. These results indicate that using Sn as the seed particle for nanowire growth is quite different from traditionally used Au in for example growth conditions and resulting nanowire properties. Thus, it is very interesting to explore alternative metal seed particles with controllable introduction of other impurities.},
  articleno    = {215603},
  author       = {Sun, Rong and Vainorius, Neimantas and Jacobsson, Daniel and Pistol, Mats-Erik and Lehmann, Sebastian and Dick, Kimberly},
  issn         = {0957-4484},
  language     = {eng},
  month        = {05},
  number       = {21},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Sn-seeded GaAs nanowires grown by MOVPE},
  url          = {http://dx.doi.org/10.1088/0957-4484/27/21/215603},
  volume       = {27},
  year         = {2016},
}