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Fabrication of poly(3-hexylthiophene) nanowires for high-mobility transistors

Nawrocki, Robert A. ; Pavlica, Egon ; Ćelić, Nevena ; Orlov, Dmytro LU orcid ; Valant, Matjaž ; Mihailović, Dragan and Bratina, Gvido (2016) In Organic Electronics 30. p.92-98
Abstract

Presented here is a novel and efficient method used to improve carrier mobilities of poly(3-hexylthiophene) (P3HT)-based organic field effect transistors by means of nanowire formation. The treatment, termed solvation, consists of depositing a small quantity of a solvent directly on top of a previously deposited semiconducting film, and allowing the solvent to evaporate slowly. Such treatment results in an increase of the saturation mobility by more than one order of magnitude, from 1.3 × 10-3 up to 3.4 × 10-2 cm2/Vs, while devices preserve their high ON/OFF ratio of ∼104. The atomic force and scanning electron microscopy studies show that solvated P3HT layers develop a network of nanowires,... (More)

Presented here is a novel and efficient method used to improve carrier mobilities of poly(3-hexylthiophene) (P3HT)-based organic field effect transistors by means of nanowire formation. The treatment, termed solvation, consists of depositing a small quantity of a solvent directly on top of a previously deposited semiconducting film, and allowing the solvent to evaporate slowly. Such treatment results in an increase of the saturation mobility by more than one order of magnitude, from 1.3 × 10-3 up to 3.4 × 10-2 cm2/Vs, while devices preserve their high ON/OFF ratio of ∼104. The atomic force and scanning electron microscopy studies show that solvated P3HT layers develop a network of nanowires, which exhibit increased degree of structural order, as demonstrated by micro Raman spectroscopy. The time-of-flight photoconductivity studies suggest that higher hole mobility stems from a reduced energy disorder of the transporting states in these structures.

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Organic thin film transistor, Raman spectroscopy, Solvation treatment, Time-of-flight photoconductivity
in
Organic Electronics
volume
30
pages
7 pages
publisher
Elsevier
external identifiers
  • scopus:84951310430
  • wos:000370375300013
ISSN
1566-1199
DOI
10.1016/j.orgel.2015.11.038
language
English
LU publication?
yes
id
2ddb2f7d-b9ef-409f-b741-59c18576ad63
date added to LUP
2016-06-20 15:29:57
date last changed
2025-01-12 07:35:27
@article{2ddb2f7d-b9ef-409f-b741-59c18576ad63,
  abstract     = {{<p>Presented here is a novel and efficient method used to improve carrier mobilities of poly(3-hexylthiophene) (P3HT)-based organic field effect transistors by means of nanowire formation. The treatment, termed solvation, consists of depositing a small quantity of a solvent directly on top of a previously deposited semiconducting film, and allowing the solvent to evaporate slowly. Such treatment results in an increase of the saturation mobility by more than one order of magnitude, from 1.3 × 10<sup>-3</sup> up to 3.4 × 10<sup>-2</sup> cm<sup>2</sup>/Vs, while devices preserve their high ON/OFF ratio of ∼10<sup>4</sup>. The atomic force and scanning electron microscopy studies show that solvated P3HT layers develop a network of nanowires, which exhibit increased degree of structural order, as demonstrated by micro Raman spectroscopy. The time-of-flight photoconductivity studies suggest that higher hole mobility stems from a reduced energy disorder of the transporting states in these structures.</p>}},
  author       = {{Nawrocki, Robert A. and Pavlica, Egon and Ćelić, Nevena and Orlov, Dmytro and Valant, Matjaž and Mihailović, Dragan and Bratina, Gvido}},
  issn         = {{1566-1199}},
  keywords     = {{Organic thin film transistor; Raman spectroscopy; Solvation treatment; Time-of-flight photoconductivity}},
  language     = {{eng}},
  month        = {{03}},
  pages        = {{92--98}},
  publisher    = {{Elsevier}},
  series       = {{Organic Electronics}},
  title        = {{Fabrication of poly(3-hexylthiophene) nanowires for high-mobility transistors}},
  url          = {{http://dx.doi.org/10.1016/j.orgel.2015.11.038}},
  doi          = {{10.1016/j.orgel.2015.11.038}},
  volume       = {{30}},
  year         = {{2016}},
}