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Reversible semimetal-semiconductor phase transition in CVD-grown monolayer MoTe2

Khaustov, V. O. ; Köster, J. ; Ochapski, M. W. ; Zakharov, A. A. LU ; Convertino, D. ; Gebeyehu, Z. M. ; Martini, L. ; Mishra, N. ; Marini, G. and Calandra, M. , et al. (2025) In 2D Materials 12(2).
Abstract

Monolayer molybdenum ditelluride (MoTe2) attracted intensive scientific interest due to the small energy difference between its semiconducting (1H) and semimetallic (1T’) phases. Understanding MoTe2 polymorphism phenomena and developing pathways to induce reversible phase transformations is of great scientific and practical importance to develop semiconductor-semimetal phase change devices. In this paper, we show how thermal annealing induces phase transition in both 1H and 1T’ phases of chemical vapor deposition (CVD) grown MoTe2. We also show that depending on the temperature, those transformations are reversible. The material is kept stable by encapsulating it with CVD-grown graphene and the thermal... (More)

Monolayer molybdenum ditelluride (MoTe2) attracted intensive scientific interest due to the small energy difference between its semiconducting (1H) and semimetallic (1T’) phases. Understanding MoTe2 polymorphism phenomena and developing pathways to induce reversible phase transformations is of great scientific and practical importance to develop semiconductor-semimetal phase change devices. In this paper, we show how thermal annealing induces phase transition in both 1H and 1T’ phases of chemical vapor deposition (CVD) grown MoTe2. We also show that depending on the temperature, those transformations are reversible. The material is kept stable by encapsulating it with CVD-grown graphene and the thermal treatments are performed in ultra-high vacuum to prevent oxidation. MoTe2 is characterized in its different phases via Raman spectroscopy and transmission electron microscopy. We report a 1H to 1T’ transition temperature of ∼1090 °C and observe reversion (i.e. 1T’ to 1H transition) at ∼900 °C. Density functional theory simulations are performed to gain insight on the experimentally measured 1H-1T’ critical transition temperatures. These findings are relevant for fundamental understanding of phase transition phenomena in monolayer MoTe2 that find applications in memories, transistors and semimetal-semiconductor junctions.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
annealing, CVD, monolayer, MoTe, phase transition, quantum materials, Raman spectroscopy
in
2D Materials
volume
12
issue
2
article number
025025
publisher
IOP Publishing
external identifiers
  • scopus:105000702624
ISSN
2053-1583
DOI
10.1088/2053-1583/adbcc0
language
English
LU publication?
yes
id
2ee50af4-0923-43d3-887f-8430e1f7b096
date added to LUP
2025-08-25 14:53:35
date last changed
2025-08-25 14:54:02
@article{2ee50af4-0923-43d3-887f-8430e1f7b096,
  abstract     = {{<p>Monolayer molybdenum ditelluride (MoTe<sub>2</sub>) attracted intensive scientific interest due to the small energy difference between its semiconducting (1H) and semimetallic (1T’) phases. Understanding MoTe<sub>2</sub> polymorphism phenomena and developing pathways to induce reversible phase transformations is of great scientific and practical importance to develop semiconductor-semimetal phase change devices. In this paper, we show how thermal annealing induces phase transition in both 1H and 1T’ phases of chemical vapor deposition (CVD) grown MoTe<sub>2</sub>. We also show that depending on the temperature, those transformations are reversible. The material is kept stable by encapsulating it with CVD-grown graphene and the thermal treatments are performed in ultra-high vacuum to prevent oxidation. MoTe<sub>2</sub> is characterized in its different phases via Raman spectroscopy and transmission electron microscopy. We report a 1H to 1T’ transition temperature of ∼1090 °C and observe reversion (i.e. 1T’ to 1H transition) at ∼900 °C. Density functional theory simulations are performed to gain insight on the experimentally measured 1H-1T’ critical transition temperatures. These findings are relevant for fundamental understanding of phase transition phenomena in monolayer MoTe<sub>2</sub> that find applications in memories, transistors and semimetal-semiconductor junctions.</p>}},
  author       = {{Khaustov, V. O. and Köster, J. and Ochapski, M. W. and Zakharov, A. A. and Convertino, D. and Gebeyehu, Z. M. and Martini, L. and Mishra, N. and Marini, G. and Calandra, M. and Kaiser, U. and Forti, S. and Coletti, C.}},
  issn         = {{2053-1583}},
  keywords     = {{annealing; CVD; monolayer; MoTe; phase transition; quantum materials; Raman spectroscopy}},
  language     = {{eng}},
  number       = {{2}},
  publisher    = {{IOP Publishing}},
  series       = {{2D Materials}},
  title        = {{Reversible semimetal-semiconductor phase transition in CVD-grown monolayer MoTe<sub>2</sub>}},
  url          = {{http://dx.doi.org/10.1088/2053-1583/adbcc0}},
  doi          = {{10.1088/2053-1583/adbcc0}},
  volume       = {{12}},
  year         = {{2025}},
}