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Electronic properties of grain boundaries in Cu(In,Ga)Se-2 thin films with various Ga-contents

Baier, Robert; Lehmann, Jascha; Lehmann, Sebastian LU ; Rissom, Thorsten; Kaufmann, Christian Alexander; Schwarzmann, Alex; Rosenwaks, Yossi; Lux-Steiner, Martha Ch. and Sadewasser, Sascha (2012) In Solar Energy Materials and Solar Cells 103. p.86-92
Abstract
We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. By means of a novel method of data analysis both potential barriers for holes and electrons were found at GBs, in a range from -118 mV to +114 mV, as well as GBs without potential barrier. No dependence of the electronic GB-properties on the Ga-content was detected. Consequently, we conclude that there is no correlation between the electronic... (More)
We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. By means of a novel method of data analysis both potential barriers for holes and electrons were found at GBs, in a range from -118 mV to +114 mV, as well as GBs without potential barrier. No dependence of the electronic GB-properties on the Ga-content was detected. Consequently, we conclude that there is no correlation between the electronic properties of GBs and the obtained maximum efficiencies of CIGSe thin film solar cells as a function of the Ga-content. (C) 2012 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
CIGSe, Grain boundaries, KPFM
in
Solar Energy Materials and Solar Cells
volume
103
pages
86 - 92
publisher
Elsevier
external identifiers
  • wos:000306044300014
  • scopus:84860641717
ISSN
0927-0248
DOI
10.1016/j.solmat.2012.04.002
language
English
LU publication?
yes
id
9890e43b-2546-4349-9ba7-f0e462b1efc2 (old id 3001369)
date added to LUP
2012-08-21 11:27:46
date last changed
2017-11-12 03:47:45
@article{9890e43b-2546-4349-9ba7-f0e462b1efc2,
  abstract     = {We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. By means of a novel method of data analysis both potential barriers for holes and electrons were found at GBs, in a range from -118 mV to +114 mV, as well as GBs without potential barrier. No dependence of the electronic GB-properties on the Ga-content was detected. Consequently, we conclude that there is no correlation between the electronic properties of GBs and the obtained maximum efficiencies of CIGSe thin film solar cells as a function of the Ga-content. (C) 2012 Elsevier B.V. All rights reserved.},
  author       = {Baier, Robert and Lehmann, Jascha and Lehmann, Sebastian and Rissom, Thorsten and Kaufmann, Christian Alexander and Schwarzmann, Alex and Rosenwaks, Yossi and Lux-Steiner, Martha Ch. and Sadewasser, Sascha},
  issn         = {0927-0248},
  keyword      = {CIGSe,Grain boundaries,KPFM},
  language     = {eng},
  pages        = {86--92},
  publisher    = {Elsevier},
  series       = {Solar Energy Materials and Solar Cells},
  title        = {Electronic properties of grain boundaries in Cu(In,Ga)Se-2 thin films with various Ga-contents},
  url          = {http://dx.doi.org/10.1016/j.solmat.2012.04.002},
  volume       = {103},
  year         = {2012},
}