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From diffusion limited to incorporation limited growth of nanowires

Johansson, Jonas LU and Magnusson, Martin H. LU (2019) In Journal of Crystal Growth 525.
Abstract

We propose a model for the axial growth rate of nanowires grown by means of the vapor-liquid-solid mechanism. Our model is based on deposition-desorption-incorporation kinetics in steady state, and using this model we discuss nanowire growth in two experimentally relevant limits: mass transport limited growth and incorporation limited growth. We discuss our modeling results in view of experimental nanowire growth results with a special emphasis on the radius-independent, incorporation limited growth rate in the high pressure limit, observed under specific, extreme conditions of nanowire growth.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
A1. Nanostructures, A3. Vapor phase epitaxy, B1. Nanomaterials, B2. Semiconducting III-V materials
in
Journal of Crystal Growth
volume
525
publisher
Elsevier
external identifiers
  • scopus:85070987670
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2019.125192
language
English
LU publication?
yes
id
30701580-6334-4561-b9ac-aced404452e8
date added to LUP
2019-09-09 11:10:03
date last changed
2019-09-26 04:41:48
@article{30701580-6334-4561-b9ac-aced404452e8,
  abstract     = {<p>We propose a model for the axial growth rate of nanowires grown by means of the vapor-liquid-solid mechanism. Our model is based on deposition-desorption-incorporation kinetics in steady state, and using this model we discuss nanowire growth in two experimentally relevant limits: mass transport limited growth and incorporation limited growth. We discuss our modeling results in view of experimental nanowire growth results with a special emphasis on the radius-independent, incorporation limited growth rate in the high pressure limit, observed under specific, extreme conditions of nanowire growth.</p>},
  articleno    = {125192},
  author       = {Johansson, Jonas and Magnusson, Martin H.},
  issn         = {0022-0248},
  keyword      = {A1. Nanostructures,A3. Vapor phase epitaxy,B1. Nanomaterials,B2. Semiconducting III-V materials},
  language     = {eng},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {From diffusion limited to incorporation limited growth of nanowires},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2019.125192},
  volume       = {525},
  year         = {2019},
}