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Direct observation of structural relaxation in amorphous compound semiconductors

Azevedo, GD; Glover, Chris LU ; Yu, KM; Foran, GJ and Ridgway, MC (2003) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 206. p.1024-1027
Abstract
Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. (C) 2003 Elsevier Science B.V. All rights reserved.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
amorphous solids, ion implantation, InAs, EXAFS
in
Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
volume
206
pages
1024 - 1027
publisher
Elsevier
external identifiers
  • wos:000183690500218
  • scopus:0037736647
ISSN
0168-583X
DOI
10.1016/S0168-583X(03)00926-1
language
English
LU publication?
yes
id
72b25fda-af21-4ad0-bff6-59d2b7fbe393 (old id 308013)
date added to LUP
2007-08-22 14:28:01
date last changed
2017-01-01 07:28:16
@article{72b25fda-af21-4ad0-bff6-59d2b7fbe393,
  abstract     = {Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. (C) 2003 Elsevier Science B.V. All rights reserved.},
  author       = {Azevedo, GD and Glover, Chris and Yu, KM and Foran, GJ and Ridgway, MC},
  issn         = {0168-583X},
  keyword      = {amorphous solids,ion implantation,InAs,EXAFS},
  language     = {eng},
  pages        = {1024--1027},
  publisher    = {Elsevier},
  series       = {Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms},
  title        = {Direct observation of structural relaxation in amorphous compound semiconductors},
  url          = {http://dx.doi.org/10.1016/S0168-583X(03)00926-1},
  volume       = {206},
  year         = {2003},
}