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Growth of high-quality Ge epitaxial layers on Si(100)

Luo, GL; Yang, TH; Chang, EY; Chang, CY and Chao, Koung-An LU (2003) In Japanese Journal of Applied Physics 42(5B). p.517-519
Abstract
A method of growing high-quality epitaxial Ge layers on a Si(100) substrate is reported. In this method, a 0.8 mum Si0.1Ge0.9 layer was first grown. Due to the large lattice mismatch between this layer and the Si substrate, many dislocations form near the interface and in the lower part of the Si0.1Ge0.9 layer. A 0.8 mum Si0.05Ge0.95 layer and a 1.0 mum top Ge layer were subsequently grown on the Si0.1Ge0.9 layer. The formed interfaces of Si0.05Ge0.95/Si0.1Ge0.9 and Ge/Si0.05Ge0.95 can bend and terminate the upward-propagated dislocations very effectively. The in situ annealing process was also performed for each individual layer. Experimental results show that the dislocation density in the top Ge layer can be greatly reduced, and the... (More)
A method of growing high-quality epitaxial Ge layers on a Si(100) substrate is reported. In this method, a 0.8 mum Si0.1Ge0.9 layer was first grown. Due to the large lattice mismatch between this layer and the Si substrate, many dislocations form near the interface and in the lower part of the Si0.1Ge0.9 layer. A 0.8 mum Si0.05Ge0.95 layer and a 1.0 mum top Ge layer were subsequently grown on the Si0.1Ge0.9 layer. The formed interfaces of Si0.05Ge0.95/Si0.1Ge0.9 and Ge/Si0.05Ge0.95 can bend and terminate the upward-propagated dislocations very effectively. The in situ annealing process was also performed for each individual layer. Experimental results show that the dislocation density in the top Ge layer can be greatly reduced, and the surface is very smooth, while the total thickness of the structure is only 2.6 mum. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
SiGe, Ge, UHV/CVD, dislocation, TEM, heterostructure
in
Japanese Journal of Applied Physics
volume
42
issue
5B
pages
517 - 519
publisher
Japan Society of Applied Physics
external identifiers
  • wos:000183745300008
  • scopus:0037704614
ISSN
0021-4922
DOI
10.1143/JJAP.42.L517
language
English
LU publication?
yes
id
e66ea2af-25b0-4a79-8b6e-82185407d1b3 (old id 308102)
date added to LUP
2007-09-17 18:45:10
date last changed
2017-09-10 03:52:05
@article{e66ea2af-25b0-4a79-8b6e-82185407d1b3,
  abstract     = {A method of growing high-quality epitaxial Ge layers on a Si(100) substrate is reported. In this method, a 0.8 mum Si0.1Ge0.9 layer was first grown. Due to the large lattice mismatch between this layer and the Si substrate, many dislocations form near the interface and in the lower part of the Si0.1Ge0.9 layer. A 0.8 mum Si0.05Ge0.95 layer and a 1.0 mum top Ge layer were subsequently grown on the Si0.1Ge0.9 layer. The formed interfaces of Si0.05Ge0.95/Si0.1Ge0.9 and Ge/Si0.05Ge0.95 can bend and terminate the upward-propagated dislocations very effectively. The in situ annealing process was also performed for each individual layer. Experimental results show that the dislocation density in the top Ge layer can be greatly reduced, and the surface is very smooth, while the total thickness of the structure is only 2.6 mum.},
  author       = {Luo, GL and Yang, TH and Chang, EY and Chang, CY and Chao, Koung-An},
  issn         = {0021-4922},
  keyword      = {SiGe,Ge,UHV/CVD,dislocation,TEM,heterostructure},
  language     = {eng},
  number       = {5B},
  pages        = {517--519},
  publisher    = {Japan Society of Applied Physics},
  series       = {Japanese Journal of Applied Physics},
  title        = {Growth of high-quality Ge epitaxial layers on Si(100)},
  url          = {http://dx.doi.org/10.1143/JJAP.42.L517},
  volume       = {42},
  year         = {2003},
}