InAs quantum dots grown on InAlGaAs lattice matched to InP
(2003) In Journal of Crystal Growth 252(4). p.481-485- Abstract
- In this paper, we present InAs quantum dots prepared on an InxAlyGa1-x-yAs surface by metal organic vapor phase epitaxy. Atomic force microscopy measurements indicate that dots grown on material with higher Al content are smaller, and that the local dot densities on step-bunched facets formed on the vicinal (0 0 1) surfaces increase. We find that these dots show luminescence at very long wavelengths, lambda(room temperature) approximate to 2.1 mum, and that the emission wavelengths are blue-shifted when the Al content is increased in the layer onto which dot material is deposited. (C) 2003 Elsevier Science B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/312507
- author
- Borgström, Magnus LU ; Pires, M ; Bryllert, Tomas LU ; Landi, S ; Seifert, Werner LU and Souza, PL
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- materials, semiconducting III-V, nanostructures, metalorganic vapor phase epitaxy
- in
- Journal of Crystal Growth
- volume
- 252
- issue
- 4
- pages
- 481 - 485
- publisher
- Elsevier
- external identifiers
-
- wos:000182546200001
- scopus:0037402379
- ISSN
- 0022-0248
- DOI
- 10.1016/S0022-0248(03)00969-2
- language
- English
- LU publication?
- yes
- id
- 49201ef6-ce3c-428b-9ef7-eb4a30331999 (old id 312507)
- date added to LUP
- 2016-04-01 17:10:08
- date last changed
- 2022-03-22 23:49:53
@article{49201ef6-ce3c-428b-9ef7-eb4a30331999, abstract = {{In this paper, we present InAs quantum dots prepared on an InxAlyGa1-x-yAs surface by metal organic vapor phase epitaxy. Atomic force microscopy measurements indicate that dots grown on material with higher Al content are smaller, and that the local dot densities on step-bunched facets formed on the vicinal (0 0 1) surfaces increase. We find that these dots show luminescence at very long wavelengths, lambda(room temperature) approximate to 2.1 mum, and that the emission wavelengths are blue-shifted when the Al content is increased in the layer onto which dot material is deposited. (C) 2003 Elsevier Science B.V. All rights reserved.}}, author = {{Borgström, Magnus and Pires, M and Bryllert, Tomas and Landi, S and Seifert, Werner and Souza, PL}}, issn = {{0022-0248}}, keywords = {{materials; semiconducting III-V; nanostructures; metalorganic vapor phase epitaxy}}, language = {{eng}}, number = {{4}}, pages = {{481--485}}, publisher = {{Elsevier}}, series = {{Journal of Crystal Growth}}, title = {{InAs quantum dots grown on InAlGaAs lattice matched to InP}}, url = {{http://dx.doi.org/10.1016/S0022-0248(03)00969-2}}, doi = {{10.1016/S0022-0248(03)00969-2}}, volume = {{252}}, year = {{2003}}, }