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InAs quantum dots grown on InAlGaAs lattice matched to InP

Borgström, Magnus LU ; Pires, M; Bryllert, Tomas LU ; Landi, S; Seifert, Werner LU and Souza, PL (2003) In Journal of Crystal Growth 252(4). p.481-485
Abstract
In this paper, we present InAs quantum dots prepared on an InxAlyGa1-x-yAs surface by metal organic vapor phase epitaxy. Atomic force microscopy measurements indicate that dots grown on material with higher Al content are smaller, and that the local dot densities on step-bunched facets formed on the vicinal (0 0 1) surfaces increase. We find that these dots show luminescence at very long wavelengths, lambda(room temperature) approximate to 2.1 mum, and that the emission wavelengths are blue-shifted when the Al content is increased in the layer onto which dot material is deposited. (C) 2003 Elsevier Science B.V. All rights reserved.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
materials, semiconducting III-V, nanostructures, metalorganic vapor phase epitaxy
in
Journal of Crystal Growth
volume
252
issue
4
pages
481 - 485
publisher
Elsevier
external identifiers
  • wos:000182546200001
  • scopus:0037402379
ISSN
0022-0248
DOI
10.1016/S0022-0248(03)00969-2
language
English
LU publication?
yes
id
49201ef6-ce3c-428b-9ef7-eb4a30331999 (old id 312507)
date added to LUP
2007-08-24 15:30:46
date last changed
2017-01-01 07:26:08
@article{49201ef6-ce3c-428b-9ef7-eb4a30331999,
  abstract     = {In this paper, we present InAs quantum dots prepared on an InxAlyGa1-x-yAs surface by metal organic vapor phase epitaxy. Atomic force microscopy measurements indicate that dots grown on material with higher Al content are smaller, and that the local dot densities on step-bunched facets formed on the vicinal (0 0 1) surfaces increase. We find that these dots show luminescence at very long wavelengths, lambda(room temperature) approximate to 2.1 mum, and that the emission wavelengths are blue-shifted when the Al content is increased in the layer onto which dot material is deposited. (C) 2003 Elsevier Science B.V. All rights reserved.},
  author       = {Borgström, Magnus and Pires, M and Bryllert, Tomas and Landi, S and Seifert, Werner and Souza, PL},
  issn         = {0022-0248},
  keyword      = {materials,semiconducting III-V,nanostructures,metalorganic vapor phase epitaxy},
  language     = {eng},
  number       = {4},
  pages        = {481--485},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {InAs quantum dots grown on InAlGaAs lattice matched to InP},
  url          = {http://dx.doi.org/10.1016/S0022-0248(03)00969-2},
  volume       = {252},
  year         = {2003},
}