Advanced

Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning

Borgström, Magnus LU ; Zela, Vilma LU and Seifert, Werner LU (2003) In Nanotechnology 14(2). p.264-267
Abstract
We show that well-defined arrays of self-assembled Ge dots on Si(001) can be grown after pre-patterning the Si surface by means of an electron beam. The electron beam produces C-containing growth masks. The overgrowth of these masks with Si results in pits at the Si surface, in and around which Ge dots nucleate selectively. A manifold of different arrays can be obtained. Almost perfect arrays of quadruples of dots nucleate in the intersections of the four {11n} facets. This way of producing quantum dot arrays is very promising for producing dot structures suitable for use in the study of, for instance, dot-dot tunnelling and related effects.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
14
issue
2
pages
264 - 267
publisher
IOP Publishing
external identifiers
  • wos:000181624100032
  • scopus:0037294527
ISSN
0957-4484
DOI
10.1088/0957-4484/14/2/331
language
English
LU publication?
yes
id
401c00e6-f2e0-4ae3-8c5b-e032b58c52a1 (old id 315704)
date added to LUP
2007-08-02 13:12:44
date last changed
2018-05-29 11:21:31
@article{401c00e6-f2e0-4ae3-8c5b-e032b58c52a1,
  abstract     = {We show that well-defined arrays of self-assembled Ge dots on Si(001) can be grown after pre-patterning the Si surface by means of an electron beam. The electron beam produces C-containing growth masks. The overgrowth of these masks with Si results in pits at the Si surface, in and around which Ge dots nucleate selectively. A manifold of different arrays can be obtained. Almost perfect arrays of quadruples of dots nucleate in the intersections of the four {11n} facets. This way of producing quantum dot arrays is very promising for producing dot structures suitable for use in the study of, for instance, dot-dot tunnelling and related effects.},
  author       = {Borgström, Magnus and Zela, Vilma and Seifert, Werner},
  issn         = {0957-4484},
  language     = {eng},
  number       = {2},
  pages        = {264--267},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning},
  url          = {http://dx.doi.org/10.1088/0957-4484/14/2/331},
  volume       = {14},
  year         = {2003},
}