Advanced

Common structure in amorphised compound semiconductors

Ridgway, MC; Azevedo, GD; Glover, Chris LU ; Yu, KM and Foran, GJ (2003) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 199. p.235-239
Abstract
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised similar to18% of the total In bonds and demonstrated the necessity of a ring distribution... (More)
Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised similar to18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members. (C) 2002 Elsevier Science B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
amorphous compound semiconductors, ion implantation
in
Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
volume
199
pages
235 - 239
publisher
Elsevier
external identifiers
  • wos:000180925400047
  • scopus:0037237788
ISSN
0168-583X
DOI
10.1016/S0168-583X(02)01531-8
language
English
LU publication?
yes
id
49eec931-3fae-4d2f-a921-7d96d836ea44 (old id 318516)
date added to LUP
2007-09-20 15:59:01
date last changed
2018-01-07 08:48:57
@article{49eec931-3fae-4d2f-a921-7d96d836ea44,
  abstract     = {Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised similar to18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members. (C) 2002 Elsevier Science B.V. All rights reserved.},
  author       = {Ridgway, MC and Azevedo, GD and Glover, Chris and Yu, KM and Foran, GJ},
  issn         = {0168-583X},
  keyword      = {amorphous compound semiconductors,ion implantation},
  language     = {eng},
  pages        = {235--239},
  publisher    = {Elsevier},
  series       = {Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms},
  title        = {Common structure in amorphised compound semiconductors},
  url          = {http://dx.doi.org/10.1016/S0168-583X(02)01531-8},
  volume       = {199},
  year         = {2003},
}