Common structure in amorphised compound semiconductors
(2003) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 199. p.235-239- Abstract
- Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised similar to18% of the total In bonds and demonstrated the necessity of a ring distribution... (More)
- Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised similar to18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members. (C) 2002 Elsevier Science B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/318516
- author
- Ridgway, MC ; Azevedo, GD ; Glover, Chris LU ; Yu, KM and Foran, GJ
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- amorphous compound semiconductors, ion implantation
- in
- Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
- volume
- 199
- pages
- 235 - 239
- publisher
- Elsevier
- external identifiers
-
- wos:000180925400047
- scopus:0037237788
- ISSN
- 0168-583X
- DOI
- 10.1016/S0168-583X(02)01531-8
- language
- English
- LU publication?
- yes
- id
- 49eec931-3fae-4d2f-a921-7d96d836ea44 (old id 318516)
- date added to LUP
- 2016-04-01 15:49:13
- date last changed
- 2022-01-28 07:22:16
@article{49eec931-3fae-4d2f-a921-7d96d836ea44, abstract = {{Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised similar to18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members. (C) 2002 Elsevier Science B.V. All rights reserved.}}, author = {{Ridgway, MC and Azevedo, GD and Glover, Chris and Yu, KM and Foran, GJ}}, issn = {{0168-583X}}, keywords = {{amorphous compound semiconductors; ion implantation}}, language = {{eng}}, pages = {{235--239}}, publisher = {{Elsevier}}, series = {{Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms}}, title = {{Common structure in amorphised compound semiconductors}}, url = {{http://dx.doi.org/10.1016/S0168-583X(02)01531-8}}, doi = {{10.1016/S0168-583X(02)01531-8}}, volume = {{199}}, year = {{2003}}, }