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Iron-mediated growth of epitaxial graphene on SiC and diamond

Cooil, S. P.; Song, F.; Williams, G. T.; Roberts, O. R.; Langstaff, D. P.; Jorgensen, B.; Hoydalsvik, K.; Breiby, D. W.; Wahlstrom, E. and Evans, D. A., et al. (2012) In Carbon 50(14). p.5099-5105
Abstract
Ordered graphene films have been fabricated on Fe-treated SiC and diamond surfaces using the catalytic conversion of sp(3) to sp(2) carbon. In comparison with the bare SiC(0 0 0 1) surface, the graphitization temperature is reduced from over 1000 degrees C to 600 degrees C and for diamond (111), this new approach enables epitaxial graphene to be grown on this surface for the first time. For both substrates, a key development is the in situ monitoring of the entire fabrication process using real-time electron spectroscopy that provides the necessary precision for the production of films of controlled thickness. The quality of the graphene/graphite layers has been verified using angle-resolved photoelectron spectroscopy, scanning tunneling... (More)
Ordered graphene films have been fabricated on Fe-treated SiC and diamond surfaces using the catalytic conversion of sp(3) to sp(2) carbon. In comparison with the bare SiC(0 0 0 1) surface, the graphitization temperature is reduced from over 1000 degrees C to 600 degrees C and for diamond (111), this new approach enables epitaxial graphene to be grown on this surface for the first time. For both substrates, a key development is the in situ monitoring of the entire fabrication process using real-time electron spectroscopy that provides the necessary precision for the production of films of controlled thickness. The quality of the graphene/graphite layers has been verified using angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and low energy electron diffraction. Graphene is only formed on treated regions of the surface and so this offers a method for fabricating and patterning graphene structures on SiC and diamond in the solid-state at industrially realistic temperatures. (c) 2012 Elsevier Ltd. All rights reserved. (Less)
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publication status
published
subject
in
Carbon
volume
50
issue
14
pages
5099 - 5105
publisher
Elsevier
external identifiers
  • wos:000308898900013
  • scopus:84865487438
ISSN
0008-6223
DOI
10.1016/j.carbon.2012.06.050
language
English
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yes
id
990a6b8e-d500-4c0f-a971-aef08169a62a (old id 3189613)
date added to LUP
2012-12-04 14:53:43
date last changed
2017-01-01 04:09:42
@article{990a6b8e-d500-4c0f-a971-aef08169a62a,
  abstract     = {Ordered graphene films have been fabricated on Fe-treated SiC and diamond surfaces using the catalytic conversion of sp(3) to sp(2) carbon. In comparison with the bare SiC(0 0 0 1) surface, the graphitization temperature is reduced from over 1000 degrees C to 600 degrees C and for diamond (111), this new approach enables epitaxial graphene to be grown on this surface for the first time. For both substrates, a key development is the in situ monitoring of the entire fabrication process using real-time electron spectroscopy that provides the necessary precision for the production of films of controlled thickness. The quality of the graphene/graphite layers has been verified using angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and low energy electron diffraction. Graphene is only formed on treated regions of the surface and so this offers a method for fabricating and patterning graphene structures on SiC and diamond in the solid-state at industrially realistic temperatures. (c) 2012 Elsevier Ltd. All rights reserved.},
  author       = {Cooil, S. P. and Song, F. and Williams, G. T. and Roberts, O. R. and Langstaff, D. P. and Jorgensen, B. and Hoydalsvik, K. and Breiby, D. W. and Wahlstrom, E. and Evans, D. A. and Wells, Justin},
  issn         = {0008-6223},
  language     = {eng},
  number       = {14},
  pages        = {5099--5105},
  publisher    = {Elsevier},
  series       = {Carbon},
  title        = {Iron-mediated growth of epitaxial graphene on SiC and diamond},
  url          = {http://dx.doi.org/10.1016/j.carbon.2012.06.050},
  volume       = {50},
  year         = {2012},
}