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Robust Surface Doping of Bi2Se3 by Rubidium Intercalation

Bianchi, Marco; Hatch, Richard C.; Li, Zheshen; Hofmann, Philip; Song, Fei; Mi, Jianli; Iversen, Bo B.; Abd El-Fattah, Zakaria M.; Loeptien, Peter and Zhou, Lihui, et al. (2012) In ACS Nano 6(8). p.7009-7015
Abstract
Rubidium adsorption on the surface of the topological insulator Bi2Se3 is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two-dimensional electron gas state (2DEG) in the conduction band. The 2DEG shows a strong Rashba-type spin orbit splitting, and it has previously been pointed out that this has relevance to nanoscale spintronics devices. The adsorption of Rb atoms, on the other hand, renders the surface very reactive, and exposure to oxygen leads to a rapid degrading of the 2DEG. We show that intercalating the Rb atoms, presumably into the van der Waals gaps in the quintuple layer structure of Bi2Se3, drastically reduces the surface reactivity while not affecting the promising electronic... (More)
Rubidium adsorption on the surface of the topological insulator Bi2Se3 is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two-dimensional electron gas state (2DEG) in the conduction band. The 2DEG shows a strong Rashba-type spin orbit splitting, and it has previously been pointed out that this has relevance to nanoscale spintronics devices. The adsorption of Rb atoms, on the other hand, renders the surface very reactive, and exposure to oxygen leads to a rapid degrading of the 2DEG. We show that intercalating the Rb atoms, presumably into the van der Waals gaps in the quintuple layer structure of Bi2Se3, drastically reduces the surface reactivity while not affecting the promising electronic structure. The intercalation process is observed above room temperature and accelerated with increasing initial Rb coverage, an effect that is ascribed to the Coulomb interaction between the charged Rb ions. Coulomb repulsion is also thought to be responsible for a uniform distribution of Rb on the surface. (Less)
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publication status
published
subject
keywords
topological Insulators, Bi2Se3, quantum well states, intercalation, alkali atoms
in
ACS Nano
volume
6
issue
8
pages
7009 - 7015
publisher
The American Chemical Society
external identifiers
  • wos:000307988900057
  • scopus:84865575364
ISSN
1936-086X
DOI
10.1021/nn3021822
language
English
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yes
id
667d9ee7-353b-4c0f-b127-5edf3f8d3abd (old id 3191476)
date added to LUP
2012-11-27 10:04:12
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2017-04-30 04:13:57
@article{667d9ee7-353b-4c0f-b127-5edf3f8d3abd,
  abstract     = {Rubidium adsorption on the surface of the topological insulator Bi2Se3 is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two-dimensional electron gas state (2DEG) in the conduction band. The 2DEG shows a strong Rashba-type spin orbit splitting, and it has previously been pointed out that this has relevance to nanoscale spintronics devices. The adsorption of Rb atoms, on the other hand, renders the surface very reactive, and exposure to oxygen leads to a rapid degrading of the 2DEG. We show that intercalating the Rb atoms, presumably into the van der Waals gaps in the quintuple layer structure of Bi2Se3, drastically reduces the surface reactivity while not affecting the promising electronic structure. The intercalation process is observed above room temperature and accelerated with increasing initial Rb coverage, an effect that is ascribed to the Coulomb interaction between the charged Rb ions. Coulomb repulsion is also thought to be responsible for a uniform distribution of Rb on the surface.},
  author       = {Bianchi, Marco and Hatch, Richard C. and Li, Zheshen and Hofmann, Philip and Song, Fei and Mi, Jianli and Iversen, Bo B. and Abd El-Fattah, Zakaria M. and Loeptien, Peter and Zhou, Lihui and Khajetoorians, Alexander A. and Wiebe, Jens and Wiesendanger, Roland and Wells, Justin},
  issn         = {1936-086X},
  keyword      = {topological Insulators,Bi2Se3,quantum well states,intercalation,alkali atoms},
  language     = {eng},
  number       = {8},
  pages        = {7009--7015},
  publisher    = {The American Chemical Society},
  series       = {ACS Nano},
  title        = {Robust Surface Doping of Bi2Se3 by Rubidium Intercalation},
  url          = {http://dx.doi.org/10.1021/nn3021822},
  volume       = {6},
  year         = {2012},
}