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Resonant states in doped quantum wells

Blom, Anders LU ; Odnoblyudov, M A; Yassievich, I N and Chao, Koung-An LU (2003) In Physica Status Solidi. B: Basic Research 235(1). p.85-88
Abstract
Resonant states can have an important influence on the electronic transport, noise and optical properties of heterostructure devices. We have used a non-variational method to study the resonant states formed by shallow donors inside and outside of quantum wells. The method allows us the evaluation of the position and the width (lifetime) of the resonant states and also of matrix elements such as optical transition probabilities. When the width is compared to results from the approach of resolvent operators, a quantitative difference is found, which we attribute to the neglected intraband scattering in the latter method. We also show how the impurity states, localized and resonant, evolve as the donor is moved into the quantum well from an... (More)
Resonant states can have an important influence on the electronic transport, noise and optical properties of heterostructure devices. We have used a non-variational method to study the resonant states formed by shallow donors inside and outside of quantum wells. The method allows us the evaluation of the position and the width (lifetime) of the resonant states and also of matrix elements such as optical transition probabilities. When the width is compared to results from the approach of resolvent operators, a quantitative difference is found, which we attribute to the neglected intraband scattering in the latter method. We also show how the impurity states, localized and resonant, evolve as the donor is moved into the quantum well from an originally infinite distance. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physica Status Solidi. B: Basic Research
volume
235
issue
1
pages
85 - 88
publisher
John Wiley & Sons
external identifiers
  • wos:000180751400015
  • scopus:0037285791
ISSN
0370-1972
DOI
language
English
LU publication?
yes
id
b402c6e1-05d5-444e-a1ee-07406d922247 (old id 319201)
date added to LUP
2007-08-24 12:12:08
date last changed
2018-05-29 10:02:12
@article{b402c6e1-05d5-444e-a1ee-07406d922247,
  abstract     = {Resonant states can have an important influence on the electronic transport, noise and optical properties of heterostructure devices. We have used a non-variational method to study the resonant states formed by shallow donors inside and outside of quantum wells. The method allows us the evaluation of the position and the width (lifetime) of the resonant states and also of matrix elements such as optical transition probabilities. When the width is compared to results from the approach of resolvent operators, a quantitative difference is found, which we attribute to the neglected intraband scattering in the latter method. We also show how the impurity states, localized and resonant, evolve as the donor is moved into the quantum well from an originally infinite distance.},
  author       = {Blom, Anders and Odnoblyudov, M A and Yassievich, I N and Chao, Koung-An},
  issn         = {0370-1972},
  language     = {eng},
  number       = {1},
  pages        = {85--88},
  publisher    = {John Wiley & Sons},
  series       = {Physica Status Solidi. B: Basic Research},
  title        = {Resonant states in doped quantum wells},
  url          = {http://dx.doi.org/},
  volume       = {235},
  year         = {2003},
}