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Strong spin-orbit interaction and magnetotransport in semiconductor Bi2O2Se nanoplates

Meng, Mengmeng; Huang, Shaoyun; Tan, Congwei; Wu, Jinxiong; Jing, Yumei; Peng, Hailin and Xu, H. Q. LU (2018) In Nanoscale 10(6). p.2704-2710
Abstract

Semiconductor Bi2O2Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It is also strongly expected that the 2D Bi2O2Se nanolayers can be an excellent material platform for developing spintronic and topological quantum devices if the presence of strong spin-orbit interaction in the 2D materials can be experimentally demonstrated. Herein, we report the experimental determination of the strength of spin-orbit interactions in Bi2O2Se nanoplates through magnetotransport measurements. The nanoplates are epitaxially grown... (More)

Semiconductor Bi2O2Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It is also strongly expected that the 2D Bi2O2Se nanolayers can be an excellent material platform for developing spintronic and topological quantum devices if the presence of strong spin-orbit interaction in the 2D materials can be experimentally demonstrated. Herein, we report the experimental determination of the strength of spin-orbit interactions in Bi2O2Se nanoplates through magnetotransport measurements. The nanoplates are epitaxially grown by chemical vapor deposition, and the magnetotransport measurements are performed at low temperatures. The measured magnetoconductance exhibits a crossover behavior from weak antilocalization to weak localization at low magnetic fields with increasing temperature or decreasing back gate voltage. We have analyzed this transition behavior of magnetoconductance based on an interference theory, which describes quantum correction to the magnetoconductance of a 2D system in the presence of spin-orbit interaction. Dephasing length and spin relaxation length are extracted from the magnetoconductance measurements. Compared to the case of other semiconductor nanostructures, the extracted relatively short spin relaxation length of ∼150 nm indicates the existence of a strong spin-orbit interaction in Bi2O2Se nanolayers.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanoscale
volume
10
issue
6
pages
7 pages
publisher
Royal Society of Chemistry
external identifiers
  • scopus:85041818872
ISSN
2040-3364
DOI
10.1039/c7nr08874d
language
English
LU publication?
yes
id
31b60fdc-5917-453d-8256-442b2d647579
date added to LUP
2018-02-20 14:11:52
date last changed
2018-10-03 10:17:06
@article{31b60fdc-5917-453d-8256-442b2d647579,
  abstract     = {<p>Semiconductor Bi<sub>2</sub>O<sub>2</sub>Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It is also strongly expected that the 2D Bi<sub>2</sub>O<sub>2</sub>Se nanolayers can be an excellent material platform for developing spintronic and topological quantum devices if the presence of strong spin-orbit interaction in the 2D materials can be experimentally demonstrated. Herein, we report the experimental determination of the strength of spin-orbit interactions in Bi<sub>2</sub>O<sub>2</sub>Se nanoplates through magnetotransport measurements. The nanoplates are epitaxially grown by chemical vapor deposition, and the magnetotransport measurements are performed at low temperatures. The measured magnetoconductance exhibits a crossover behavior from weak antilocalization to weak localization at low magnetic fields with increasing temperature or decreasing back gate voltage. We have analyzed this transition behavior of magnetoconductance based on an interference theory, which describes quantum correction to the magnetoconductance of a 2D system in the presence of spin-orbit interaction. Dephasing length and spin relaxation length are extracted from the magnetoconductance measurements. Compared to the case of other semiconductor nanostructures, the extracted relatively short spin relaxation length of ∼150 nm indicates the existence of a strong spin-orbit interaction in Bi<sub>2</sub>O<sub>2</sub>Se nanolayers.</p>},
  author       = {Meng, Mengmeng and Huang, Shaoyun and Tan, Congwei and Wu, Jinxiong and Jing, Yumei and Peng, Hailin and Xu, H. Q.},
  issn         = {2040-3364},
  language     = {eng},
  month        = {02},
  number       = {6},
  pages        = {2704--2710},
  publisher    = {Royal Society of Chemistry},
  series       = {Nanoscale},
  title        = {Strong spin-orbit interaction and magnetotransport in semiconductor Bi<sub>2</sub>O<sub>2</sub>Se nanoplates},
  url          = {http://dx.doi.org/10.1039/c7nr08874d},
  volume       = {10},
  year         = {2018},
}