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Scanning photoelectron microscopy study of as-grown and heat-treated chemical vapor deposition boron-doped diamond films

Zakharov, Alexei LU ; Ralchenko, V; Khmelnitskii, R and Lindau, Ingolf LU (2002) In Journal of Vacuum Science and Technology B 20(6). p.2509-2513
Abstract
The electronic structure of as-grown and high temperature (1625 C) annealed chemical vapour deposition boron-doped (1-4 ppm) diamond films has been studied using a scanning photoelectron microscope with lateral resolution in the 1 mum range. The fresh surfaces have been obtained by cleaving free-standing films in situ at a pressure of 7 X 10(-11) Torr. The major part of the contrast in photoelectron images is due to topography effect but grain structure (grain size 10-50 mum) can be also detected. The detailed study of separate grains shows that as-grown films demonstrate significant intensity in the vicinity of the Fermi level with a characteristic band tail which is believed to result from static and dynamic site disorder. In annealed... (More)
The electronic structure of as-grown and high temperature (1625 C) annealed chemical vapour deposition boron-doped (1-4 ppm) diamond films has been studied using a scanning photoelectron microscope with lateral resolution in the 1 mum range. The fresh surfaces have been obtained by cleaving free-standing films in situ at a pressure of 7 X 10(-11) Torr. The major part of the contrast in photoelectron images is due to topography effect but grain structure (grain size 10-50 mum) can be also detected. The detailed study of separate grains shows that as-grown films demonstrate significant intensity in the vicinity of the Fermi level with a characteristic band tail which is believed to result from static and dynamic site disorder. In annealed films a sharp drop in Fermi level intensity is observed and samples show charging effects in scanning electron microscope measurements. As-grown films contain different types of defects which appear as electrically active trapping centers and give rise to the increased density of states at the Fermi level. The evolution of the defect structure and possible boron redistribution upon annealing explains the much lower photoemission signal around the Fermi level in heat-treated films. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Vacuum Science and Technology B
volume
20
issue
6
pages
2509 - 2513
publisher
American Institute of Physics
external identifiers
  • wos:000180307300054
  • scopus:0036883107
ISSN
1520-8567
DOI
10.1116/1.1525009
language
English
LU publication?
yes
id
c36ed4d2-a9d2-4336-a74d-a1cd5522adb7 (old id 320271)
date added to LUP
2007-11-19 12:16:16
date last changed
2017-01-01 04:32:35
@article{c36ed4d2-a9d2-4336-a74d-a1cd5522adb7,
  abstract     = {The electronic structure of as-grown and high temperature (1625 C) annealed chemical vapour deposition boron-doped (1-4 ppm) diamond films has been studied using a scanning photoelectron microscope with lateral resolution in the 1 mum range. The fresh surfaces have been obtained by cleaving free-standing films in situ at a pressure of 7 X 10(-11) Torr. The major part of the contrast in photoelectron images is due to topography effect but grain structure (grain size 10-50 mum) can be also detected. The detailed study of separate grains shows that as-grown films demonstrate significant intensity in the vicinity of the Fermi level with a characteristic band tail which is believed to result from static and dynamic site disorder. In annealed films a sharp drop in Fermi level intensity is observed and samples show charging effects in scanning electron microscope measurements. As-grown films contain different types of defects which appear as electrically active trapping centers and give rise to the increased density of states at the Fermi level. The evolution of the defect structure and possible boron redistribution upon annealing explains the much lower photoemission signal around the Fermi level in heat-treated films.},
  author       = {Zakharov, Alexei and Ralchenko, V and Khmelnitskii, R and Lindau, Ingolf},
  issn         = {1520-8567},
  language     = {eng},
  number       = {6},
  pages        = {2509--2513},
  publisher    = {American Institute of Physics},
  series       = {Journal of Vacuum Science and Technology B},
  title        = {Scanning photoelectron microscopy study of as-grown and heat-treated chemical vapor deposition boron-doped diamond films},
  url          = {http://dx.doi.org/10.1116/1.1525009},
  volume       = {20},
  year         = {2002},
}