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Scattering-matrix formalism of electron transport through three-terminal quantum structures: formulation and application to Y-junction devices

Csontos, Dan LU and Xu, Hongqi LU (2002) In Journal of Physics: Condensed Matter1990-01-01+01:00 14(47). p.12513-12528
Abstract
In this paper we present a formalism for the calculation of electron transport through three-terminal junction devices, which have received attention due to their recently demonstrated non-linear electrical properties. The formalism, which is based on the scattering-matrix method, takes quantum interference effects fully into account. Furthermore, the formalism provides numerical stability in the calculations as well as large flexibility in the modelling of arbitrary potential profiles due to the common basis approach used in the formulation. The method is used to calculate the transport properties for Y-shaped three-terminal ballistic junction (TBJ) structures with configurations typical of recently performed experiments. Quantum... (More)
In this paper we present a formalism for the calculation of electron transport through three-terminal junction devices, which have received attention due to their recently demonstrated non-linear electrical properties. The formalism, which is based on the scattering-matrix method, takes quantum interference effects fully into account. Furthermore, the formalism provides numerical stability in the calculations as well as large flexibility in the modelling of arbitrary potential profiles due to the common basis approach used in the formulation. The method is used to calculate the transport properties for Y-shaped three-terminal ballistic junction (TBJ) structures with configurations typical of recently performed experiments. Quantum interference effects are shown to strongly influence the transport characteristics of TBJ structures due to complex scattering of the electrons in the cavity-like coupling window between the three arms of the device. The theoretical approach presented in this paper provides a flexible tool for the study of such quantum interference effects, which may play an important role in the design and functionality of future nanoscale devices based on three-terminal junctions. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physics: Condensed Matter1990-01-01+01:00
volume
14
issue
47
pages
12513 - 12528
publisher
IOP Publishing
external identifiers
  • wos:000180323900028
  • scopus:0037011429
ISSN
1361-648X
DOI
10.1088/0953-8984/14/47/324
language
English
LU publication?
yes
id
6ee84145-b4d5-4baa-ad5e-f1067f499b13 (old id 320279)
date added to LUP
2007-08-15 12:20:23
date last changed
2017-01-01 07:05:09
@article{6ee84145-b4d5-4baa-ad5e-f1067f499b13,
  abstract     = {In this paper we present a formalism for the calculation of electron transport through three-terminal junction devices, which have received attention due to their recently demonstrated non-linear electrical properties. The formalism, which is based on the scattering-matrix method, takes quantum interference effects fully into account. Furthermore, the formalism provides numerical stability in the calculations as well as large flexibility in the modelling of arbitrary potential profiles due to the common basis approach used in the formulation. The method is used to calculate the transport properties for Y-shaped three-terminal ballistic junction (TBJ) structures with configurations typical of recently performed experiments. Quantum interference effects are shown to strongly influence the transport characteristics of TBJ structures due to complex scattering of the electrons in the cavity-like coupling window between the three arms of the device. The theoretical approach presented in this paper provides a flexible tool for the study of such quantum interference effects, which may play an important role in the design and functionality of future nanoscale devices based on three-terminal junctions.},
  author       = {Csontos, Dan and Xu, Hongqi},
  issn         = {1361-648X},
  language     = {eng},
  number       = {47},
  pages        = {12513--12528},
  publisher    = {IOP Publishing},
  series       = {Journal of Physics: Condensed Matter1990-01-01+01:00},
  title        = {Scattering-matrix formalism of electron transport through three-terminal quantum structures: formulation and application to Y-junction devices},
  url          = {http://dx.doi.org/10.1088/0953-8984/14/47/324},
  volume       = {14},
  year         = {2002},
}