Isolating single selected quantum dots using cryogenic photolithography
(2002) Proceedings of the 19th Nordic Semiconductor Meeting T101. p.133-135- Abstract
- We propose and demonstrate a technique combining micro-photoluminescence imaging with scanning photolithography at Cryogenic temperatures for creating photoresist masks at designated locations relative to single selected self-assembled quantum dots. The technique is demonstrated by producing a photoresist mask on top of a single selected InP quantum dot imbedded in GaInP. A mesa containing the quantum dot is then created by wet chemical etching. The combination of micro-photoluminescence and scanning photolithography relies on the use of two different lasers with a micro-photoluminescence setup, each laser having different power, focusing and wavelength. The resulting structure enables many experiments and applications in the emerging... (More)
- We propose and demonstrate a technique combining micro-photoluminescence imaging with scanning photolithography at Cryogenic temperatures for creating photoresist masks at designated locations relative to single selected self-assembled quantum dots. The technique is demonstrated by producing a photoresist mask on top of a single selected InP quantum dot imbedded in GaInP. A mesa containing the quantum dot is then created by wet chemical etching. The combination of micro-photoluminescence and scanning photolithography relies on the use of two different lasers with a micro-photoluminescence setup, each laser having different power, focusing and wavelength. The resulting structure enables many experiments and applications in the emerging field of single quantum dot physics. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/322733
- author
- Fälth, S ; Zwiller, Valéry LU ; Seifert, Werner LU and Pistol, Mats-Erik LU
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Wet chemical etching
- host publication
- PHYSICA SCRIPTA
- volume
- T101
- pages
- 133 - 135
- publisher
- Royal Swedish Academy of Sciences
- conference name
- Proceedings of the 19th Nordic Semiconductor Meeting
- conference location
- Lyngby, Denmark
- conference dates
- 2001-05-20 - 2001-05-23
- external identifiers
-
- wos:000179465600035
- other:CODEN: PHSTER
- scopus:0036437645
- ISSN
- 0031-8949
- 1402-4896
- DOI
- 10.1238/Physica.Topical.101a00133
- language
- English
- LU publication?
- yes
- id
- 13b273f9-bfa6-47a6-a4fb-63b23a469bea (old id 322733)
- date added to LUP
- 2016-04-01 11:42:15
- date last changed
- 2024-01-07 17:18:28
@inproceedings{13b273f9-bfa6-47a6-a4fb-63b23a469bea,
abstract = {{We propose and demonstrate a technique combining micro-photoluminescence imaging with scanning photolithography at Cryogenic temperatures for creating photoresist masks at designated locations relative to single selected self-assembled quantum dots. The technique is demonstrated by producing a photoresist mask on top of a single selected InP quantum dot imbedded in GaInP. A mesa containing the quantum dot is then created by wet chemical etching. The combination of micro-photoluminescence and scanning photolithography relies on the use of two different lasers with a micro-photoluminescence setup, each laser having different power, focusing and wavelength. The resulting structure enables many experiments and applications in the emerging field of single quantum dot physics.}},
author = {{Fälth, S and Zwiller, Valéry and Seifert, Werner and Pistol, Mats-Erik}},
booktitle = {{PHYSICA SCRIPTA}},
issn = {{0031-8949}},
keywords = {{Wet chemical etching}},
language = {{eng}},
pages = {{133--135}},
publisher = {{Royal Swedish Academy of Sciences}},
title = {{Isolating single selected quantum dots using cryogenic photolithography}},
url = {{http://dx.doi.org/10.1238/Physica.Topical.101a00133}},
doi = {{10.1238/Physica.Topical.101a00133}},
volume = {{T101}},
year = {{2002}},
}