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Oxidation and reduction behavior of Ge/Si islands

Sass, T; Zela, Vilma LU ; Gustafsson, Anders LU ; Pietzonka, I and Seifert, Werner LU (2002) In Applied Physics Letters 81(18). p.3455-3457
Abstract
We have investigated the oxidation/reduction behavior of dome-shaped three-dimensional islands of Ge on Si(001) grown by ultrabigh vacuum chemical vapor deposition. The oxidation was done by exposing the surfaces to H2O steam in N-2. The reduction was done by H-2, which selectively reduces only the GeO2. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge enrichments. In many cases these enrichments show epitaxial relationship with the underlying Si substrate. These structures are of potential interest... (More)
We have investigated the oxidation/reduction behavior of dome-shaped three-dimensional islands of Ge on Si(001) grown by ultrabigh vacuum chemical vapor deposition. The oxidation was done by exposing the surfaces to H2O steam in N-2. The reduction was done by H-2, which selectively reduces only the GeO2. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge enrichments. In many cases these enrichments show epitaxial relationship with the underlying Si substrate. These structures are of potential interest for Ge dots embedded in an insulating material as, well as for lateral epitaxial overgrowth of SiO2 / Si(001) by Ge, using the reduced Ge dots as the seeds for epitaxy. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
81
issue
18
pages
3455 - 3457
publisher
American Institute of Physics
external identifiers
  • wos:000178881800049
  • scopus:79955983691
ISSN
0003-6951
DOI
10.1063/1.1517715
language
English
LU publication?
yes
id
27a8fd39-a77c-427e-a5b8-52b3d3999ccf (old id 324612)
date added to LUP
2007-11-09 10:41:54
date last changed
2017-01-01 04:56:43
@article{27a8fd39-a77c-427e-a5b8-52b3d3999ccf,
  abstract     = {We have investigated the oxidation/reduction behavior of dome-shaped three-dimensional islands of Ge on Si(001) grown by ultrabigh vacuum chemical vapor deposition. The oxidation was done by exposing the surfaces to H2O steam in N-2. The reduction was done by H-2, which selectively reduces only the GeO2. The results of the oxidation/reduction processes under varying conditions were analyzed by high-resolution transmission electron microscopy. We found that the selective reduction of such structures does not result in a perfect recovery of the former Ge dots, but results in phase-segregated Ge enrichments. In many cases these enrichments show epitaxial relationship with the underlying Si substrate. These structures are of potential interest for Ge dots embedded in an insulating material as, well as for lateral epitaxial overgrowth of SiO2 / Si(001) by Ge, using the reduced Ge dots as the seeds for epitaxy.},
  author       = {Sass, T and Zela, Vilma and Gustafsson, Anders and Pietzonka, I and Seifert, Werner},
  issn         = {0003-6951},
  language     = {eng},
  number       = {18},
  pages        = {3455--3457},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Oxidation and reduction behavior of Ge/Si islands},
  url          = {http://dx.doi.org/10.1063/1.1517715},
  volume       = {81},
  year         = {2002},
}