A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics
(2002) In Physica E: Low-Dimensional Systems and Nanostructures 13(2-4). p.942-945- Abstract
- A room-temperature electrical property of three-terminal ballistic junctions (TBJs) is predicted. For a symmetric TBJ. it is shown that when finite voltages F and -V are applied to the left and right branches. the voltage Output V, from the central branch will always be negative. This characteristic appears even when the symmetry in the TBJ is broken. provided that V! is larger than a threshold. Applications of these devices in nanoelectronics are proposed.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/326321
- author
- Xu, Hongqi LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- three-terminal ballistic junctions, nonlinear transport, rectification, logic devices
- in
- Physica E: Low-Dimensional Systems and Nanostructures
- volume
- 13
- issue
- 2-4
- pages
- 942 - 945
- publisher
- Elsevier
- external identifiers
-
- wos:000176869100197
- scopus:0036492866
- ISSN
- 1386-9477
- DOI
- 10.1016/S1386-9477(02)00240-0
- language
- English
- LU publication?
- yes
- id
- fdde9d5b-f908-490f-903d-86e9e526b0e4 (old id 326321)
- date added to LUP
- 2016-04-01 16:53:03
- date last changed
- 2022-01-28 22:50:20
@article{fdde9d5b-f908-490f-903d-86e9e526b0e4, abstract = {{A room-temperature electrical property of three-terminal ballistic junctions (TBJs) is predicted. For a symmetric TBJ. it is shown that when finite voltages F and -V are applied to the left and right branches. the voltage Output V, from the central branch will always be negative. This characteristic appears even when the symmetry in the TBJ is broken. provided that V! is larger than a threshold. Applications of these devices in nanoelectronics are proposed.}}, author = {{Xu, Hongqi}}, issn = {{1386-9477}}, keywords = {{three-terminal ballistic junctions; nonlinear transport; rectification; logic devices}}, language = {{eng}}, number = {{2-4}}, pages = {{942--945}}, publisher = {{Elsevier}}, series = {{Physica E: Low-Dimensional Systems and Nanostructures}}, title = {{A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics}}, url = {{http://dx.doi.org/10.1016/S1386-9477(02)00240-0}}, doi = {{10.1016/S1386-9477(02)00240-0}}, volume = {{13}}, year = {{2002}}, }