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Unimodal dome-shaped island population of Ge/Si (001) by step-wise growth in UHV-CVD

Zela, Vilma LU ; Pietzonka, I; Sass, T; Thelander, Claes LU ; Jeppesen, Sören LU and Seifert, Werner LU (2002) In Physica E: Low-Dimensional Systems and Nanostructures 13(2-4). p.1013-1017
Abstract
This work introduces a new approach to achieve a unimodal dome-shaped island population for the self-assembled Ge/Si (0 0 1) dots grown by ultra-high vacuum chemical vapour deposition at T = 620 degreesC. A step-wise growth mode is applied, consisting of two Ge deposition steps with a short growth interruption in between. In the first step, a "base structure" with pyramids and domes is grown while in the second one, an additional Ge amount at reduced pressure is supplied. Selective "feeding" of only the pyramids and their conversion into domes occurs. Atomic force microscopy and transmission electron microscopy studies indicate that the shape transition starts with nucleation of material onto the {105} facets close to the most... (More)
This work introduces a new approach to achieve a unimodal dome-shaped island population for the self-assembled Ge/Si (0 0 1) dots grown by ultra-high vacuum chemical vapour deposition at T = 620 degreesC. A step-wise growth mode is applied, consisting of two Ge deposition steps with a short growth interruption in between. In the first step, a "base structure" with pyramids and domes is grown while in the second one, an additional Ge amount at reduced pressure is supplied. Selective "feeding" of only the pyramids and their conversion into domes occurs. Atomic force microscopy and transmission electron microscopy studies indicate that the shape transition starts with nucleation of material onto the {105} facets close to the most strain-relaxed top area of the pyramids. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
self-assembling, UHV-CVD, Ge/Si, quantum dots
in
Physica E: Low-Dimensional Systems and Nanostructures
volume
13
issue
2-4
pages
1013 - 1017
publisher
Elsevier
external identifiers
  • wos:000176869100214
  • scopus:0036492832
ISSN
1386-9477
DOI
10.1016/S1386-9477(02)00291-6
language
English
LU publication?
yes
id
9974c6f4-c086-4b89-8731-86c60cd9f763 (old id 326331)
date added to LUP
2007-11-16 14:22:29
date last changed
2017-02-26 04:20:07
@article{9974c6f4-c086-4b89-8731-86c60cd9f763,
  abstract     = {This work introduces a new approach to achieve a unimodal dome-shaped island population for the self-assembled Ge/Si (0 0 1) dots grown by ultra-high vacuum chemical vapour deposition at T = 620 degreesC. A step-wise growth mode is applied, consisting of two Ge deposition steps with a short growth interruption in between. In the first step, a "base structure" with pyramids and domes is grown while in the second one, an additional Ge amount at reduced pressure is supplied. Selective "feeding" of only the pyramids and their conversion into domes occurs. Atomic force microscopy and transmission electron microscopy studies indicate that the shape transition starts with nucleation of material onto the {105} facets close to the most strain-relaxed top area of the pyramids.},
  author       = {Zela, Vilma and Pietzonka, I and Sass, T and Thelander, Claes and Jeppesen, Sören and Seifert, Werner},
  issn         = {1386-9477},
  keyword      = {self-assembling,UHV-CVD,Ge/Si,quantum dots},
  language     = {eng},
  number       = {2-4},
  pages        = {1013--1017},
  publisher    = {Elsevier},
  series       = {Physica E: Low-Dimensional Systems and Nanostructures},
  title        = {Unimodal dome-shaped island population of Ge/Si (001) by step-wise growth in UHV-CVD},
  url          = {http://dx.doi.org/10.1016/S1386-9477(02)00291-6},
  volume       = {13},
  year         = {2002},
}