Resonant tunneling via donor X states in the AlAs barrier and binding energies of donors bound to X-XY and X-Z valleys
(2002) In Physical Review B (Condensed Matter and Materials Physics) 66(7).- Abstract
- Magnetotransport in GaAs/AlAs/GaAs single-barrier heterostructures, incorporating unintentional donors in the barrier, is studied. Resonant tunneling is observed through the quasiconfined states in the AlAs layer which originate from the X-XY and X-Z conduction-band minima and through two distinct states of the donors bound to the X-XY and X-Z valleys. This allowes us to determine directly the binding energies of X-XY- and X-Z-related donors at the center of a 5-nm AlAs barrier as E-B(X-XY)approximate to70 meV and E-B(X-Z)approximate to50 meV, respectively. Furthermore, we observe an additional oscillatory fine structure of the donor resonances which we attribute to a difference in the binding energies of donors located at different... (More)
- Magnetotransport in GaAs/AlAs/GaAs single-barrier heterostructures, incorporating unintentional donors in the barrier, is studied. Resonant tunneling is observed through the quasiconfined states in the AlAs layer which originate from the X-XY and X-Z conduction-band minima and through two distinct states of the donors bound to the X-XY and X-Z valleys. This allowes us to determine directly the binding energies of X-XY- and X-Z-related donors at the center of a 5-nm AlAs barrier as E-B(X-XY)approximate to70 meV and E-B(X-Z)approximate to50 meV, respectively. Furthermore, we observe an additional oscillatory fine structure of the donor resonances which we attribute to a difference in the binding energies of donors located at different position in the AlAs layer. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/329011
- author
- Khanin, YN ; Vdovin, EE ; Dubrovskii, YV ; Novoselov, KS ; Carlsson, SB and Omling, Pär LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 66
- issue
- 7
- article number
- 073302
- publisher
- American Physical Society
- external identifiers
-
- wos:000177969800014
- scopus:0037104191
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.66.073302
- language
- English
- LU publication?
- yes
- id
- 46cf5924-5ae8-484c-9c5c-eb33e03cafa9 (old id 329011)
- date added to LUP
- 2016-04-01 15:45:01
- date last changed
- 2022-02-27 08:30:07
@article{46cf5924-5ae8-484c-9c5c-eb33e03cafa9,
abstract = {{Magnetotransport in GaAs/AlAs/GaAs single-barrier heterostructures, incorporating unintentional donors in the barrier, is studied. Resonant tunneling is observed through the quasiconfined states in the AlAs layer which originate from the X-XY and X-Z conduction-band minima and through two distinct states of the donors bound to the X-XY and X-Z valleys. This allowes us to determine directly the binding energies of X-XY- and X-Z-related donors at the center of a 5-nm AlAs barrier as E-B(X-XY)approximate to70 meV and E-B(X-Z)approximate to50 meV, respectively. Furthermore, we observe an additional oscillatory fine structure of the donor resonances which we attribute to a difference in the binding energies of donors located at different position in the AlAs layer.}},
author = {{Khanin, YN and Vdovin, EE and Dubrovskii, YV and Novoselov, KS and Carlsson, SB and Omling, Pär}},
issn = {{1098-0121}},
language = {{eng}},
number = {{7}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Resonant tunneling via donor X states in the AlAs barrier and binding energies of donors bound to X-XY and X-Z valleys}},
url = {{http://dx.doi.org/10.1103/PhysRevB.66.073302}},
doi = {{10.1103/PhysRevB.66.073302}},
volume = {{66}},
year = {{2002}},
}