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Resonant tunneling via donor X states in the AlAs barrier and binding energies of donors bound to X-XY and X-Z valleys

Khanin, YN; Vdovin, EE; Dubrovskii, YV; Novoselov, KS; Carlsson, SB and Omling, Pär LU (2002) In Physical Review B (Condensed Matter and Materials Physics) 66(7).
Abstract
Magnetotransport in GaAs/AlAs/GaAs single-barrier heterostructures, incorporating unintentional donors in the barrier, is studied. Resonant tunneling is observed through the quasiconfined states in the AlAs layer which originate from the X-XY and X-Z conduction-band minima and through two distinct states of the donors bound to the X-XY and X-Z valleys. This allowes us to determine directly the binding energies of X-XY- and X-Z-related donors at the center of a 5-nm AlAs barrier as E-B(X-XY)approximate to70 meV and E-B(X-Z)approximate to50 meV, respectively. Furthermore, we observe an additional oscillatory fine structure of the donor resonances which we attribute to a difference in the binding energies of donors located at different... (More)
Magnetotransport in GaAs/AlAs/GaAs single-barrier heterostructures, incorporating unintentional donors in the barrier, is studied. Resonant tunneling is observed through the quasiconfined states in the AlAs layer which originate from the X-XY and X-Z conduction-band minima and through two distinct states of the donors bound to the X-XY and X-Z valleys. This allowes us to determine directly the binding energies of X-XY- and X-Z-related donors at the center of a 5-nm AlAs barrier as E-B(X-XY)approximate to70 meV and E-B(X-Z)approximate to50 meV, respectively. Furthermore, we observe an additional oscillatory fine structure of the donor resonances which we attribute to a difference in the binding energies of donors located at different position in the AlAs layer. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
66
issue
7
publisher
American Physical Society
external identifiers
  • wos:000177969800014
  • scopus:0037104191
ISSN
1098-0121
DOI
10.1103/PhysRevB.66.073302
language
English
LU publication?
yes
id
46cf5924-5ae8-484c-9c5c-eb33e03cafa9 (old id 329011)
date added to LUP
2007-11-02 10:54:23
date last changed
2017-01-01 06:45:50
@article{46cf5924-5ae8-484c-9c5c-eb33e03cafa9,
  abstract     = {Magnetotransport in GaAs/AlAs/GaAs single-barrier heterostructures, incorporating unintentional donors in the barrier, is studied. Resonant tunneling is observed through the quasiconfined states in the AlAs layer which originate from the X-XY and X-Z conduction-band minima and through two distinct states of the donors bound to the X-XY and X-Z valleys. This allowes us to determine directly the binding energies of X-XY- and X-Z-related donors at the center of a 5-nm AlAs barrier as E-B(X-XY)approximate to70 meV and E-B(X-Z)approximate to50 meV, respectively. Furthermore, we observe an additional oscillatory fine structure of the donor resonances which we attribute to a difference in the binding energies of donors located at different position in the AlAs layer.},
  articleno    = {073302},
  author       = {Khanin, YN and Vdovin, EE and Dubrovskii, YV and Novoselov, KS and Carlsson, SB and Omling, Pär},
  issn         = {1098-0121},
  language     = {eng},
  number       = {7},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Resonant tunneling via donor X states in the AlAs barrier and binding energies of donors bound to X-XY and X-Z valleys},
  url          = {http://dx.doi.org/10.1103/PhysRevB.66.073302},
  volume       = {66},
  year         = {2002},
}