Control of excitonic and electron-hole processes in wide-gap crystals by means of elastic uniaxial stress
(2002) In Surface Review and Letters 9(1). p.299-304- Abstract
- The time-resolved emission spectra and the excitation spectra of the main emissions have been measured for the first time in stressed and unstressed RbI crystals using synchrotron radiation of 10-30 eV at 8 K. It has been shown that the applied elastic uniaxial stress (EUS) offers promise for the separation of the elementary multiplication mechanisms of electronic excitations. A different influence of EUS on the self-trapping of excitons or holes at 8 K has been discussed. The mean free path of free excitons decreases, while that of valence holes increases in a stressed RbI crystal.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/329344
- author
- Lushchik, A ; Lushchik, C ; Vasil'chenko, E ; Kirm, M and Martinson, Indrek LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Surface Review and Letters
- volume
- 9
- issue
- 1
- pages
- 299 - 304
- publisher
- World Scientific Publishing
- external identifiers
-
- wos:000177754500045
- scopus:0036463057
- ISSN
- 0218-625X
- DOI
- 10.1142/S0218625X02002221
- language
- English
- LU publication?
- yes
- id
- b17cf002-39c9-4205-acb5-ba544d069c60 (old id 329344)
- date added to LUP
- 2016-04-01 16:13:02
- date last changed
- 2022-02-05 06:38:47
@article{b17cf002-39c9-4205-acb5-ba544d069c60, abstract = {{The time-resolved emission spectra and the excitation spectra of the main emissions have been measured for the first time in stressed and unstressed RbI crystals using synchrotron radiation of 10-30 eV at 8 K. It has been shown that the applied elastic uniaxial stress (EUS) offers promise for the separation of the elementary multiplication mechanisms of electronic excitations. A different influence of EUS on the self-trapping of excitons or holes at 8 K has been discussed. The mean free path of free excitons decreases, while that of valence holes increases in a stressed RbI crystal.}}, author = {{Lushchik, A and Lushchik, C and Vasil'chenko, E and Kirm, M and Martinson, Indrek}}, issn = {{0218-625X}}, language = {{eng}}, number = {{1}}, pages = {{299--304}}, publisher = {{World Scientific Publishing}}, series = {{Surface Review and Letters}}, title = {{Control of excitonic and electron-hole processes in wide-gap crystals by means of elastic uniaxial stress}}, url = {{http://dx.doi.org/10.1142/S0218625X02002221}}, doi = {{10.1142/S0218625X02002221}}, volume = {{9}}, year = {{2002}}, }