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Control of excitonic and electron-hole processes in wide-gap crystals by means of elastic uniaxial stress

Lushchik, A; Lushchik, C; Vasil'chenko, E; Kirm, M and Martinson, Indrek LU (2002) In Surface Review and Letters 9(1). p.299-304
Abstract
The time-resolved emission spectra and the excitation spectra of the main emissions have been measured for the first time in stressed and unstressed RbI crystals using synchrotron radiation of 10-30 eV at 8 K. It has been shown that the applied elastic uniaxial stress (EUS) offers promise for the separation of the elementary multiplication mechanisms of electronic excitations. A different influence of EUS on the self-trapping of excitons or holes at 8 K has been discussed. The mean free path of free excitons decreases, while that of valence holes increases in a stressed RbI crystal.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Surface Review and Letters
volume
9
issue
1
pages
299 - 304
publisher
World Scientific
external identifiers
  • wos:000177754500045
  • scopus:0036463057
ISSN
0218-625X
DOI
10.1142/S0218625X02002221
language
English
LU publication?
yes
id
b17cf002-39c9-4205-acb5-ba544d069c60 (old id 329344)
date added to LUP
2007-11-02 10:38:25
date last changed
2017-06-18 04:28:05
@article{b17cf002-39c9-4205-acb5-ba544d069c60,
  abstract     = {The time-resolved emission spectra and the excitation spectra of the main emissions have been measured for the first time in stressed and unstressed RbI crystals using synchrotron radiation of 10-30 eV at 8 K. It has been shown that the applied elastic uniaxial stress (EUS) offers promise for the separation of the elementary multiplication mechanisms of electronic excitations. A different influence of EUS on the self-trapping of excitons or holes at 8 K has been discussed. The mean free path of free excitons decreases, while that of valence holes increases in a stressed RbI crystal.},
  author       = {Lushchik, A and Lushchik, C and Vasil'chenko, E and Kirm, M and Martinson, Indrek},
  issn         = {0218-625X},
  language     = {eng},
  number       = {1},
  pages        = {299--304},
  publisher    = {World Scientific},
  series       = {Surface Review and Letters},
  title        = {Control of excitonic and electron-hole processes in wide-gap crystals by means of elastic uniaxial stress},
  url          = {http://dx.doi.org/10.1142/S0218625X02002221},
  volume       = {9},
  year         = {2002},
}