Nonstoichiometric Low-Temperature Grown GaAs Nanowires
(2015) In Nano Letters 15(10). p.5-6440- Abstract
The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones... (More)
The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.
(Less)
- author
- publishing date
- 2015-10-14
- type
- Contribution to journal
- publication status
- published
- in
- Nano Letters
- volume
- 15
- issue
- 10
- pages
- 6 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:26339987
- scopus:84944339788
- ISSN
- 1530-6992
- DOI
- 10.1021/acs.nanolett.5b01802
- language
- English
- LU publication?
- no
- id
- 32a75674-01d6-4f52-bb3b-a19cb5d30bc1
- date added to LUP
- 2019-05-15 09:53:53
- date last changed
- 2024-01-01 04:44:21
@article{32a75674-01d6-4f52-bb3b-a19cb5d30bc1,
abstract = {{<p>The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires. </p>}},
author = {{Díaz Álvarez, Adrian and Xu, Tao and Tütüncüoglu, Gözde and Demonchaux, Thomas and Nys, Jean-Philippe and Berthe, Maxime and Matteini, Federico and Potts, Heidi A and Troadec, David and Patriarche, Gilles and Lampin, Jean-François and Coinon, Christophe and Fontcuberta i Morral, Anna and Dunin-Borkowski, Rafal E and Ebert, Philipp and Grandidier, Bruno}},
issn = {{1530-6992}},
language = {{eng}},
month = {{10}},
number = {{10}},
pages = {{5--6440}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Nonstoichiometric Low-Temperature Grown GaAs Nanowires}},
url = {{http://dx.doi.org/10.1021/acs.nanolett.5b01802}},
doi = {{10.1021/acs.nanolett.5b01802}},
volume = {{15}},
year = {{2015}},
}