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Electronic structure of nanometer-scale GaAs whiskers

Persson, Martin LU and Xu, Hongqi LU (2002) In Applied Physics Letters 81(7). p.1309-1311
Abstract
We report a theoretical study of the electronic structure of GaAs nanowhiskers, grown in the [111] direction with hexagonal cross section, based on a tight binding approach. It is shown that the band structure of the GaAs nanowhiskers shifts from a direct band gap to an indirect band gap when the lateral size of the nanowhiskers becomes smaller than a certain value. The effective masses of the electrons and holes are shown to increase with decreasing the nanowhisker lateral size. It is also shown that the light-hole states appear to be at the top of the valence bands. The electrical and optical properties of the nanowhiskers are discussed in terms of the results of the calculations. (C) 2002 American Institute of Physics.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
81
issue
7
pages
1309 - 1311
publisher
American Institute of Physics
external identifiers
  • wos:000177284400052
  • scopus:79956000430
ISSN
0003-6951
DOI
10.1063/1.1498871
language
English
LU publication?
yes
id
62d711e3-5412-4a73-ba5a-e8bcb9ff8406 (old id 332162)
date added to LUP
2007-11-08 14:22:15
date last changed
2017-01-01 05:03:01
@article{62d711e3-5412-4a73-ba5a-e8bcb9ff8406,
  abstract     = {We report a theoretical study of the electronic structure of GaAs nanowhiskers, grown in the [111] direction with hexagonal cross section, based on a tight binding approach. It is shown that the band structure of the GaAs nanowhiskers shifts from a direct band gap to an indirect band gap when the lateral size of the nanowhiskers becomes smaller than a certain value. The effective masses of the electrons and holes are shown to increase with decreasing the nanowhisker lateral size. It is also shown that the light-hole states appear to be at the top of the valence bands. The electrical and optical properties of the nanowhiskers are discussed in terms of the results of the calculations. (C) 2002 American Institute of Physics.},
  author       = {Persson, Martin and Xu, Hongqi},
  issn         = {0003-6951},
  language     = {eng},
  number       = {7},
  pages        = {1309--1311},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Electronic structure of nanometer-scale GaAs whiskers},
  url          = {http://dx.doi.org/10.1063/1.1498871},
  volume       = {81},
  year         = {2002},
}