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Correlated electron tunneling in the single-molecule nanosystems

Soldatov, ES; Gubin, SP; Johansson, Peter LU ; Kolesov, VV; Sergeev-Cherenkov, AN; Shorokhov, VV; Sulaimankulov, KS and Khomutov, GB (2002) In Physics of Low-Dimensional Structures 1-2. p.113-134
Abstract
The original approach to the creation of high-temperature single-electron tunneling systems has been developed based on the use of nanocluster molecules. The morphology and electron tunneling characteristics through single nanocluster molecules organized as highly-ordered monolayer Langmuir-Blodgett films on atomically-flat graphite substrate have been studied experimentally using scanning tunneling microscopy (STM) and spectroscopy techniques with sub-nanometer spatial resolution in a double barrier tunnel junction configuration "STM" tip - monomolecular film - conducting substrate" at ambient conditions. Molecular single-electron transistors on the basis of a single nanocluster molecule operating at room temperature were constructed and... (More)
The original approach to the creation of high-temperature single-electron tunneling systems has been developed based on the use of nanocluster molecules. The morphology and electron tunneling characteristics through single nanocluster molecules organized as highly-ordered monolayer Langmuir-Blodgett films on atomically-flat graphite substrate have been studied experimentally using scanning tunneling microscopy (STM) and spectroscopy techniques with sub-nanometer spatial resolution in a double barrier tunnel junction configuration "STM" tip - monomolecular film - conducting substrate" at ambient conditions. Molecular single-electron transistors on the basis of a single nanocluster molecule operating at room temperature were constructed and studied. Various nanocluster molecules with cores from 3 to 23 metal atoms were used as a central electrode in these transistors. Computer simulation of I-V curves of molecular single-electron tunneling (SET) transistor was carried out using the modified theory of single-electronics with consideration of discreteness of the energy spectrum of a molecule as well as the effects of energy relaxation of electrons in the molecule. A comparison of the simulated I-V curves with the experimental ones allow to conclude that the experimental data correspond to the slow energy relaxation case. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physics of Low-Dimensional Structures
volume
1-2
pages
113 - 134
publisher
VSV CO. LTD
external identifiers
  • wos:000176337200009
  • scopus:18844473755
ISSN
0204-3467
language
English
LU publication?
yes
id
453ed762-20cc-4f28-a486-8a0b765959ea (old id 334711)
date added to LUP
2007-11-14 13:23:32
date last changed
2017-01-01 07:16:20
@article{453ed762-20cc-4f28-a486-8a0b765959ea,
  abstract     = {The original approach to the creation of high-temperature single-electron tunneling systems has been developed based on the use of nanocluster molecules. The morphology and electron tunneling characteristics through single nanocluster molecules organized as highly-ordered monolayer Langmuir-Blodgett films on atomically-flat graphite substrate have been studied experimentally using scanning tunneling microscopy (STM) and spectroscopy techniques with sub-nanometer spatial resolution in a double barrier tunnel junction configuration "STM" tip - monomolecular film - conducting substrate" at ambient conditions. Molecular single-electron transistors on the basis of a single nanocluster molecule operating at room temperature were constructed and studied. Various nanocluster molecules with cores from 3 to 23 metal atoms were used as a central electrode in these transistors. Computer simulation of I-V curves of molecular single-electron tunneling (SET) transistor was carried out using the modified theory of single-electronics with consideration of discreteness of the energy spectrum of a molecule as well as the effects of energy relaxation of electrons in the molecule. A comparison of the simulated I-V curves with the experimental ones allow to conclude that the experimental data correspond to the slow energy relaxation case.},
  author       = {Soldatov, ES and Gubin, SP and Johansson, Peter and Kolesov, VV and Sergeev-Cherenkov, AN and Shorokhov, VV and Sulaimankulov, KS and Khomutov, GB},
  issn         = {0204-3467},
  language     = {eng},
  pages        = {113--134},
  publisher    = {VSV CO. LTD},
  series       = {Physics of Low-Dimensional Structures},
  title        = {Correlated electron tunneling in the single-molecule nanosystems},
  volume       = {1-2},
  year         = {2002},
}