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Investigation of polymethylmethacrylate resist residues using photoelectron microscopy

Maximov, Ivan LU ; Zakharov, AA; Holmqvist, Tommy LU ; Montelius, Lars LU and Lindau, Ingolf LU (2002) 20th North American Conference on Molecular Beam Epitaxy In Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20(3). p.1139-1142
Abstract
Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
volume
20
issue
3
pages
1139 - 1142
publisher
American Institute of Physics
conference name
20th North American Conference on Molecular Beam Epitaxy
external identifiers
  • wos:000176358300061
  • scopus:0035998552
ISSN
1520-8567
1071-1023
DOI
10.1116/1.1470509
language
English
LU publication?
yes
id
7738bcdf-8fa1-4928-a064-edd73d860233 (old id 334766)
date added to LUP
2007-11-28 11:29:39
date last changed
2017-10-10 13:13:44
@inproceedings{7738bcdf-8fa1-4928-a064-edd73d860233,
  abstract     = {Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.},
  author       = {Maximov, Ivan and Zakharov, AA and Holmqvist, Tommy and Montelius, Lars and Lindau, Ingolf},
  booktitle    = {Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures},
  issn         = {1520-8567},
  language     = {eng},
  number       = {3},
  pages        = {1139--1142},
  publisher    = {American Institute of Physics},
  title        = {Investigation of polymethylmethacrylate resist residues using photoelectron microscopy},
  url          = {http://dx.doi.org/10.1116/1.1470509},
  volume       = {20},
  year         = {2002},
}