Measurements of Si ion stopping in amorphous silicon
(2002) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 190(1-4). p.84-88- Abstract
- The stopping of Si-28 ions in polycrystalline Si foils has been measured over the energy range 0.1-3.3 MeV per nucleon. For the low energy interval (0.1-0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2-3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p-i-n diode with the Si-28 ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good agreement with literature data based on Doppler shift measurements of short nuclear lifetimes but are about 20%, smaller than the SRIM prediction. Above the stopping maximum the data are in agreement with SRIM within the limits of statistical... (More)
- The stopping of Si-28 ions in polycrystalline Si foils has been measured over the energy range 0.1-3.3 MeV per nucleon. For the low energy interval (0.1-0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2-3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p-i-n diode with the Si-28 ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good agreement with literature data based on Doppler shift measurements of short nuclear lifetimes but are about 20%, smaller than the SRIM prediction. Above the stopping maximum the data are in agreement with SRIM within the limits of statistical uncertainty. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/335436
- author
- Whitlow, Harry J LU ; Timmers, H ; Elliman, R G ; Weijers, T D M ; Zhang, Y W ; Uribastera, J and O'Connor, D J
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- energy loss, silicon, stopping, time of flight
- in
- Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
- volume
- 190
- issue
- 1-4
- pages
- 84 - 88
- publisher
- Elsevier
- external identifiers
-
- wos:000176108800015
- scopus:0036569460
- ISSN
- 0168-583X
- DOI
- 10.1016/S0168-583X(01)01301-5
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Nuclear Physics (Faculty of Technology) (011013007)
- id
- f672709e-ce18-4819-84d8-bed34f2ebdf3 (old id 335436)
- date added to LUP
- 2016-04-01 16:51:26
- date last changed
- 2022-01-28 22:39:26
@article{f672709e-ce18-4819-84d8-bed34f2ebdf3,
abstract = {{The stopping of Si-28 ions in polycrystalline Si foils has been measured over the energy range 0.1-3.3 MeV per nucleon. For the low energy interval (0.1-0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2-3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p-i-n diode with the Si-28 ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good agreement with literature data based on Doppler shift measurements of short nuclear lifetimes but are about 20%, smaller than the SRIM prediction. Above the stopping maximum the data are in agreement with SRIM within the limits of statistical uncertainty.}},
author = {{Whitlow, Harry J and Timmers, H and Elliman, R G and Weijers, T D M and Zhang, Y W and Uribastera, J and O'Connor, D J}},
issn = {{0168-583X}},
keywords = {{energy loss; silicon; stopping; time of flight}},
language = {{eng}},
number = {{1-4}},
pages = {{84--88}},
publisher = {{Elsevier}},
series = {{Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms}},
title = {{Measurements of Si ion stopping in amorphous silicon}},
url = {{http://dx.doi.org/10.1016/S0168-583X(01)01301-5}},
doi = {{10.1016/S0168-583X(01)01301-5}},
volume = {{190}},
year = {{2002}},
}