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Threshold stoichiometry for beam induced nitrogen depletion of SiN

Timmers, H; Weijers, TDM; Elliman, RG; Uribasterra, J; Whitlow, Harry J LU and Sarwe, Eva-Lena LU (2002) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 190. p.428-432
Abstract
Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species. the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3 > N/Si greater than or equal to 1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate correlates non-linearly with the electronic energy loss of the projectile ion in the film. Sufficiently long exposure of nitrogen-rich films renders the mechanism, which prevents depletion of nitrogen-poor films, ineffective.... (More)
Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species. the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3 > N/Si greater than or equal to 1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate correlates non-linearly with the electronic energy loss of the projectile ion in the film. Sufficiently long exposure of nitrogen-rich films renders the mechanism, which prevents depletion of nitrogen-poor films, ineffective. Compromising depth-resolution. nitrogen depletion from SiN films during ERD analysis can be reduced significantly by using projectile beams with low atomic numbers. (C) 2002 Published by Elsevier Science B.V. (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
keywords
nitrogen depletion, ion beam analysis, elastic recoil detection
in
Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
volume
190
pages
428 - 432
publisher
Elsevier
external identifiers
  • wos:000176108800085
  • scopus:0036569663
ISSN
0168-583X
DOI
10.1016/S0168-583X(01)01217-4
language
English
LU publication?
yes
id
b577d25d-63a6-4265-a8e9-74266913d1a9 (old id 335450)
date added to LUP
2007-11-16 14:55:14
date last changed
2017-01-01 06:42:22
@article{b577d25d-63a6-4265-a8e9-74266913d1a9,
  abstract     = {Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species. the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3 > N/Si greater than or equal to 1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate correlates non-linearly with the electronic energy loss of the projectile ion in the film. Sufficiently long exposure of nitrogen-rich films renders the mechanism, which prevents depletion of nitrogen-poor films, ineffective. Compromising depth-resolution. nitrogen depletion from SiN films during ERD analysis can be reduced significantly by using projectile beams with low atomic numbers. (C) 2002 Published by Elsevier Science B.V.},
  author       = {Timmers, H and Weijers, TDM and Elliman, RG and Uribasterra, J and Whitlow, Harry J and Sarwe, Eva-Lena},
  issn         = {0168-583X},
  keyword      = {nitrogen depletion,ion beam analysis,elastic recoil detection},
  language     = {eng},
  pages        = {428--432},
  publisher    = {Elsevier},
  series       = {Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms},
  title        = {Threshold stoichiometry for beam induced nitrogen depletion of SiN},
  url          = {http://dx.doi.org/10.1016/S0168-583X(01)01217-4},
  volume       = {190},
  year         = {2002},
}