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Resonant states induced by impurities in heterostructures

Blom, Anders LU ; Odnoblyudov, MA; Yassievich, IN and Chao, Koung-An LU (2002) In Physical Review B (Condensed Matter and Materials Physics) 65(15).
Abstract
A study of the formation of resonant states in the conduction band, induced by impurities outside heterostructure quantum wells, is presented. We derive general expressions for the capture and scattering amplitudes, the resonance position and width, and we also calculate the effect on the energy spectrum and the density of states in the quantum well. The theory is applied to two typical impurity potentials, the zero-range potential of deep levels and the Coulomb potential. It is found that the perturbation of the density of states can be significant over wide energy intervals, and that the resonance position may behave nonmonotonically with the modulation-doping distance. The resonance width decays exponentially with the distance, but... (More)
A study of the formation of resonant states in the conduction band, induced by impurities outside heterostructure quantum wells, is presented. We derive general expressions for the capture and scattering amplitudes, the resonance position and width, and we also calculate the effect on the energy spectrum and the density of states in the quantum well. The theory is applied to two typical impurity potentials, the zero-range potential of deep levels and the Coulomb potential. It is found that the perturbation of the density of states can be significant over wide energy intervals, and that the resonance position may behave nonmonotonically with the modulation-doping distance. The resonance width decays exponentially with the distance, but becomes of the same order as the band discontinuity as we approach close to the quantum well interface. The capture and scattering coefficients may vary by several orders of magnitude over narrow energy intervals, producing a pronounced and strong scattering mechanism. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
65
issue
15
publisher
American Physical Society
external identifiers
  • wos:000175147100075
  • scopus:0037089264
ISSN
1098-0121
DOI
10.1103/PhysRevB.65.155302
language
English
LU publication?
yes
id
84481244-7fe1-4022-ab4d-0f5f70479cdc (old id 339847)
date added to LUP
2007-08-10 11:31:39
date last changed
2017-01-01 07:11:05
@article{84481244-7fe1-4022-ab4d-0f5f70479cdc,
  abstract     = {A study of the formation of resonant states in the conduction band, induced by impurities outside heterostructure quantum wells, is presented. We derive general expressions for the capture and scattering amplitudes, the resonance position and width, and we also calculate the effect on the energy spectrum and the density of states in the quantum well. The theory is applied to two typical impurity potentials, the zero-range potential of deep levels and the Coulomb potential. It is found that the perturbation of the density of states can be significant over wide energy intervals, and that the resonance position may behave nonmonotonically with the modulation-doping distance. The resonance width decays exponentially with the distance, but becomes of the same order as the band discontinuity as we approach close to the quantum well interface. The capture and scattering coefficients may vary by several orders of magnitude over narrow energy intervals, producing a pronounced and strong scattering mechanism.},
  articleno    = {155302},
  author       = {Blom, Anders and Odnoblyudov, MA and Yassievich, IN and Chao, Koung-An},
  issn         = {1098-0121},
  language     = {eng},
  number       = {15},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Resonant states induced by impurities in heterostructures},
  url          = {http://dx.doi.org/10.1103/PhysRevB.65.155302},
  volume       = {65},
  year         = {2002},
}