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Negative differential capacitance of quantum dots

Wang, SD; Sun, ZZ; Cue, N; Xu, Hongqi LU and Wang, XR (2002) In Physical Review B (Condensed Matter and Materials Physics) 65(12).
Abstract
The dependence of charges accumulated on a quantum dot under an external voltage bias is studied. The charge is sensitive to the changes of number of filled levels and the number of conducting levels (channels). We clarify that there are two possible outcomes of applying a bias. (a) The number of conducting channels increases, but the number of filled levels decreases. (b) The number of filled levels increases or does not change while the number of conducting channels (levels) increases with the bias. In case (b), charges are generally expected to increase monotonically with the applied bias. We show, however, that this expectation may not materialize when the electron transmission coefficients depend on bias. Numerical evidences and a... (More)
The dependence of charges accumulated on a quantum dot under an external voltage bias is studied. The charge is sensitive to the changes of number of filled levels and the number of conducting levels (channels). We clarify that there are two possible outcomes of applying a bias. (a) The number of conducting channels increases, but the number of filled levels decreases. (b) The number of filled levels increases or does not change while the number of conducting channels (levels) increases with the bias. In case (b), charges are generally expected to increase monotonically with the applied bias. We show, however, that this expectation may not materialize when the electron transmission coefficients depend on bias. Numerical evidences and a theoretical explanation of this negative differential capacitance, i.e., charges accumulated on a quantum dot decrease with applied bias, are presented. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
65
issue
12
publisher
American Physical Society
external identifiers
  • wos:000174938800055
  • scopus:0037085918
ISSN
1098-0121
DOI
10.1103/PhysRevB.65.125307
language
English
LU publication?
yes
id
ba3e7fff-523e-4ce4-837b-e198cfd6ac1d (old id 340170)
date added to LUP
2007-11-19 13:08:37
date last changed
2017-08-06 04:36:45
@article{ba3e7fff-523e-4ce4-837b-e198cfd6ac1d,
  abstract     = {The dependence of charges accumulated on a quantum dot under an external voltage bias is studied. The charge is sensitive to the changes of number of filled levels and the number of conducting levels (channels). We clarify that there are two possible outcomes of applying a bias. (a) The number of conducting channels increases, but the number of filled levels decreases. (b) The number of filled levels increases or does not change while the number of conducting channels (levels) increases with the bias. In case (b), charges are generally expected to increase monotonically with the applied bias. We show, however, that this expectation may not materialize when the electron transmission coefficients depend on bias. Numerical evidences and a theoretical explanation of this negative differential capacitance, i.e., charges accumulated on a quantum dot decrease with applied bias, are presented.},
  articleno    = {125307},
  author       = {Wang, SD and Sun, ZZ and Cue, N and Xu, Hongqi and Wang, XR},
  issn         = {1098-0121},
  language     = {eng},
  number       = {12},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Negative differential capacitance of quantum dots},
  url          = {http://dx.doi.org/10.1103/PhysRevB.65.125307},
  volume       = {65},
  year         = {2002},
}