Advanced

Resonant acceptor states in uniaxially strained semiconductors

Odnoblyudov, MA; Prokofiev, Alexei LU and Yassievich, IN (2002) In Journal of Experimental and Theoretical Physics 94(3). p.593-602
Abstract
A new approach to calculating the parameters of resonant states is proposed, which also makes it possible to determine the probabilities of the resonant scattering and capture probabilities at the resonant state. This approach is based on the application of the method of configuration interaction, which was proposed for the first time by Fano for an analysis of field ionization of the helium atom. Following Fano, use is made of two different Hamiltonians of the initial approximation for the states of continuum and the initial local state. Following Dirac, the wave functions are constructed in the same way as in the general theory of scattering. A detailed analysis and specific calculations are made for resonant acceptor states in... (More)
A new approach to calculating the parameters of resonant states is proposed, which also makes it possible to determine the probabilities of the resonant scattering and capture probabilities at the resonant state. This approach is based on the application of the method of configuration interaction, which was proposed for the first time by Fano for an analysis of field ionization of the helium atom. Following Fano, use is made of two different Hamiltonians of the initial approximation for the states of continuum and the initial local state. Following Dirac, the wave functions are constructed in the same way as in the general theory of scattering. A detailed analysis and specific calculations are made for resonant acceptor states in uniaxially strained germanium under a pressure directed along the [001] and [111] axes. (C) 2002 MAIK "Nauka/Interperiodica". (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Experimental and Theoretical Physics
volume
94
issue
3
pages
593 - 602
publisher
MAIK Nauka/Interperiodica
external identifiers
  • wos:000174796100016
  • scopus:23044532517
ISSN
1063-7761
DOI
10.1134/1.1469158
language
English
LU publication?
yes
id
d9fbf107-25fa-48bb-8f93-9bbde6f72220 (old id 340629)
date added to LUP
2007-11-08 07:44:47
date last changed
2017-01-01 07:00:17
@article{d9fbf107-25fa-48bb-8f93-9bbde6f72220,
  abstract     = {A new approach to calculating the parameters of resonant states is proposed, which also makes it possible to determine the probabilities of the resonant scattering and capture probabilities at the resonant state. This approach is based on the application of the method of configuration interaction, which was proposed for the first time by Fano for an analysis of field ionization of the helium atom. Following Fano, use is made of two different Hamiltonians of the initial approximation for the states of continuum and the initial local state. Following Dirac, the wave functions are constructed in the same way as in the general theory of scattering. A detailed analysis and specific calculations are made for resonant acceptor states in uniaxially strained germanium under a pressure directed along the [001] and [111] axes. (C) 2002 MAIK "Nauka/Interperiodica".},
  author       = {Odnoblyudov, MA and Prokofiev, Alexei and Yassievich, IN},
  issn         = {1063-7761},
  language     = {eng},
  number       = {3},
  pages        = {593--602},
  publisher    = {MAIK Nauka/Interperiodica},
  series       = {Journal of Experimental and Theoretical Physics},
  title        = {Resonant acceptor states in uniaxially strained semiconductors},
  url          = {http://dx.doi.org/10.1134/1.1469158},
  volume       = {94},
  year         = {2002},
}