Resonant acceptor states in uniaxially strained semiconductors
(2002) In Journal of Experimental and Theoretical Physics 94(3). p.593-602- Abstract
- A new approach to calculating the parameters of resonant states is proposed, which also makes it possible to determine the probabilities of the resonant scattering and capture probabilities at the resonant state. This approach is based on the application of the method of configuration interaction, which was proposed for the first time by Fano for an analysis of field ionization of the helium atom. Following Fano, use is made of two different Hamiltonians of the initial approximation for the states of continuum and the initial local state. Following Dirac, the wave functions are constructed in the same way as in the general theory of scattering. A detailed analysis and specific calculations are made for resonant acceptor states in... (More)
- A new approach to calculating the parameters of resonant states is proposed, which also makes it possible to determine the probabilities of the resonant scattering and capture probabilities at the resonant state. This approach is based on the application of the method of configuration interaction, which was proposed for the first time by Fano for an analysis of field ionization of the helium atom. Following Fano, use is made of two different Hamiltonians of the initial approximation for the states of continuum and the initial local state. Following Dirac, the wave functions are constructed in the same way as in the general theory of scattering. A detailed analysis and specific calculations are made for resonant acceptor states in uniaxially strained germanium under a pressure directed along the [001] and [111] axes. (C) 2002 MAIK "Nauka/Interperiodica". (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/340629
- author
- Odnoblyudov, MA ; Prokofiev, Alexei LU and Yassievich, IN
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Experimental and Theoretical Physics
- volume
- 94
- issue
- 3
- pages
- 593 - 602
- publisher
- MAIK Nauka/Interperiodica
- external identifiers
-
- wos:000174796100016
- scopus:23044532517
- ISSN
- 1063-7761
- DOI
- 10.1134/1.1469158
- language
- English
- LU publication?
- yes
- id
- d9fbf107-25fa-48bb-8f93-9bbde6f72220 (old id 340629)
- date added to LUP
- 2016-04-01 16:15:32
- date last changed
- 2022-01-28 18:28:30
@article{d9fbf107-25fa-48bb-8f93-9bbde6f72220, abstract = {{A new approach to calculating the parameters of resonant states is proposed, which also makes it possible to determine the probabilities of the resonant scattering and capture probabilities at the resonant state. This approach is based on the application of the method of configuration interaction, which was proposed for the first time by Fano for an analysis of field ionization of the helium atom. Following Fano, use is made of two different Hamiltonians of the initial approximation for the states of continuum and the initial local state. Following Dirac, the wave functions are constructed in the same way as in the general theory of scattering. A detailed analysis and specific calculations are made for resonant acceptor states in uniaxially strained germanium under a pressure directed along the [001] and [111] axes. (C) 2002 MAIK "Nauka/Interperiodica".}}, author = {{Odnoblyudov, MA and Prokofiev, Alexei and Yassievich, IN}}, issn = {{1063-7761}}, language = {{eng}}, number = {{3}}, pages = {{593--602}}, publisher = {{MAIK Nauka/Interperiodica}}, series = {{Journal of Experimental and Theoretical Physics}}, title = {{Resonant acceptor states in uniaxially strained semiconductors}}, url = {{http://dx.doi.org/10.1134/1.1469158}}, doi = {{10.1134/1.1469158}}, volume = {{94}}, year = {{2002}}, }