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Simulation of characteristics of a molecular single-electron tunneling transistor with a discrete energy spectrum of the central electrode

Shorokhov, VV; Johansson, Peter LU and Soldatov, ES (2002) In Applied Physics Reviews 91(5). p.3049-3053
Abstract
Current-voltage curves of molecular single-electron tunneling transistors are simulated based on a modified theory of single electronics that accounts for the discreteness of the energy spectrum of the molecule. The simulation was performed including effects of energy relaxation of the electrons in the molecule for two limiting cases of fast and slow relaxation, and for both equidistant and randomly spaced energy levels of the molecule. An efficient recursion method allowing a fast calculation of the Gibbs canonical distribution for electrons in the molecule is suggested and realized. A comparison of the simulated I-V curves with the experimental ones shows that the experimental conditions correspond to the slow relaxation case. (C) 2002... (More)
Current-voltage curves of molecular single-electron tunneling transistors are simulated based on a modified theory of single electronics that accounts for the discreteness of the energy spectrum of the molecule. The simulation was performed including effects of energy relaxation of the electrons in the molecule for two limiting cases of fast and slow relaxation, and for both equidistant and randomly spaced energy levels of the molecule. An efficient recursion method allowing a fast calculation of the Gibbs canonical distribution for electrons in the molecule is suggested and realized. A comparison of the simulated I-V curves with the experimental ones shows that the experimental conditions correspond to the slow relaxation case. (C) 2002 American Institute of Physics. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
91
issue
5
pages
3049 - 3053
publisher
American Institute of Physics
external identifiers
  • wos:000174182400072
  • scopus:12344259182
ISSN
0021-8979
DOI
10.1063/1.1435832
language
English
LU publication?
yes
id
dd326d0c-5eff-4213-b4e1-15981b0a8f1b (old id 342570)
date added to LUP
2007-11-13 15:15:48
date last changed
2017-03-05 03:31:52
@article{dd326d0c-5eff-4213-b4e1-15981b0a8f1b,
  abstract     = {Current-voltage curves of molecular single-electron tunneling transistors are simulated based on a modified theory of single electronics that accounts for the discreteness of the energy spectrum of the molecule. The simulation was performed including effects of energy relaxation of the electrons in the molecule for two limiting cases of fast and slow relaxation, and for both equidistant and randomly spaced energy levels of the molecule. An efficient recursion method allowing a fast calculation of the Gibbs canonical distribution for electrons in the molecule is suggested and realized. A comparison of the simulated I-V curves with the experimental ones shows that the experimental conditions correspond to the slow relaxation case. (C) 2002 American Institute of Physics.},
  author       = {Shorokhov, VV and Johansson, Peter and Soldatov, ES},
  issn         = {0021-8979},
  language     = {eng},
  number       = {5},
  pages        = {3049--3053},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Simulation of characteristics of a molecular single-electron tunneling transistor with a discrete energy spectrum of the central electrode},
  url          = {http://dx.doi.org/10.1063/1.1435832},
  volume       = {91},
  year         = {2002},
}