Defect engineering in Czochralski silicon by electron irradiation at different temperatures
(2002) E-MRS 2001 Spring Meeting Symposium B Defect Engineering of Advanced Semiconductor Devices 186(1). p.121-125- Abstract
- Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electrons in a wide range of temperatures (80-900 K) have been performed. The samples with different contents of oxygen (O-16, O-18) and carbon (C-12, C-13) isotopes were investigated, The main defect reactions are found to depend strongly on irradiation temperature and dose, as well as on impurity content and pre-history of the samples. Some new radiation-induced defects are revealed after irradiation at elevated temperatures as well as after a two-step (hot + room-temperature (RT)) irradiation.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/345747
- author
- Lindström, J L ; Murin, LI ; Hallberg, T ; Markevich, VP ; Svensson, BG ; Kleverman, Mats LU and Hermansson, J
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- carbon, defects, electron irradiation, silicon, oxygen
- host publication
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- volume
- 186
- issue
- 1
- pages
- 121 - 125
- publisher
- Elsevier
- conference name
- E-MRS 2001 Spring Meeting Symposium B Defect Engineering of Advanced Semiconductor Devices
- conference location
- Strasbourg, France
- conference dates
- 2001-06-04 - 2001-06-08
- external identifiers
-
- wos:000173279900021
- scopus:0036135055
- ISSN
- 0168-583X
- DOI
- 10.1016/S0168-583X(01)00871-0
- language
- English
- LU publication?
- yes
- id
- 0ea0aab5-d580-4d87-839f-0c580ce7361f (old id 345747)
- date added to LUP
- 2016-04-01 15:57:52
- date last changed
- 2022-01-28 08:22:24
@inproceedings{0ea0aab5-d580-4d87-839f-0c580ce7361f, abstract = {{Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electrons in a wide range of temperatures (80-900 K) have been performed. The samples with different contents of oxygen (O-16, O-18) and carbon (C-12, C-13) isotopes were investigated, The main defect reactions are found to depend strongly on irradiation temperature and dose, as well as on impurity content and pre-history of the samples. Some new radiation-induced defects are revealed after irradiation at elevated temperatures as well as after a two-step (hot + room-temperature (RT)) irradiation.}}, author = {{Lindström, J L and Murin, LI and Hallberg, T and Markevich, VP and Svensson, BG and Kleverman, Mats and Hermansson, J}}, booktitle = {{Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}}, issn = {{0168-583X}}, keywords = {{carbon; defects; electron irradiation; silicon; oxygen}}, language = {{eng}}, number = {{1}}, pages = {{121--125}}, publisher = {{Elsevier}}, title = {{Defect engineering in Czochralski silicon by electron irradiation at different temperatures}}, url = {{http://dx.doi.org/10.1016/S0168-583X(01)00871-0}}, doi = {{10.1016/S0168-583X(01)00871-0}}, volume = {{186}}, year = {{2002}}, }