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Defect engineering in Czochralski silicon by electron irradiation at different temperatures

Lindström, J L; Murin, LI; Hallberg, T; Markevich, VP; Svensson, BG; Kleverman, Mats LU and Hermansson, J (2002) E-MRS 2001 Spring Meeting Symposium B Defect Engineering of Advanced Semiconductor Devices In Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 186(1). p.121-125
Abstract
Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electrons in a wide range of temperatures (80-900 K) have been performed. The samples with different contents of oxygen (O-16, O-18) and carbon (C-12, C-13) isotopes were investigated, The main defect reactions are found to depend strongly on irradiation temperature and dose, as well as on impurity content and pre-history of the samples. Some new radiation-induced defects are revealed after irradiation at elevated temperatures as well as after a two-step (hot + room-temperature (RT)) irradiation.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
carbon, defects, electron irradiation, silicon, oxygen
in
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
volume
186
issue
1
pages
121 - 125
publisher
Elsevier
conference name
E-MRS 2001 Spring Meeting Symposium B Defect Engineering of Advanced Semiconductor Devices
external identifiers
  • wos:000173279900021
  • scopus:0036135055
ISSN
0168-583X
DOI
10.1016/S0168-583X(01)00871-0
language
English
LU publication?
yes
id
0ea0aab5-d580-4d87-839f-0c580ce7361f (old id 345747)
date added to LUP
2007-11-28 09:48:56
date last changed
2017-01-01 06:51:49
@inproceedings{0ea0aab5-d580-4d87-839f-0c580ce7361f,
  abstract     = {Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electrons in a wide range of temperatures (80-900 K) have been performed. The samples with different contents of oxygen (O-16, O-18) and carbon (C-12, C-13) isotopes were investigated, The main defect reactions are found to depend strongly on irradiation temperature and dose, as well as on impurity content and pre-history of the samples. Some new radiation-induced defects are revealed after irradiation at elevated temperatures as well as after a two-step (hot + room-temperature (RT)) irradiation.},
  author       = {Lindström, J L and Murin, LI and Hallberg, T and Markevich, VP and Svensson, BG and Kleverman, Mats and Hermansson, J},
  booktitle    = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
  issn         = {0168-583X},
  keyword      = {carbon,defects,electron irradiation,silicon,oxygen},
  language     = {eng},
  number       = {1},
  pages        = {121--125},
  publisher    = {Elsevier},
  title        = {Defect engineering in Czochralski silicon by electron irradiation at different temperatures},
  url          = {http://dx.doi.org/10.1016/S0168-583X(01)00871-0},
  volume       = {186},
  year         = {2002},
}