Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon
(2012) In Applied Physics Letters 101(26).- Abstract
- We present room temperature resistivity measurements of shallow, monolayer doped phosphorus in silicon, a material system of interest for both conventional microelectronic manufacturing, and future quantum electronic devices. Using an in-situ variable spacing microscopic four-probe system, we demonstrate the ability to separate the conductivity of the substrate and the doping layer. We show that the obtained sensitivity to the dopant layer derives from a combination of the nanoscale contacting areas and the conductivity difference between the highly doped 2D layer and the substrate. At an encapsulation depth of only 4 nm, we demonstrate a room temperature resistivity of 1.4k Omega/square. (C) 2012 American Institute of Physics.... (More)
- We present room temperature resistivity measurements of shallow, monolayer doped phosphorus in silicon, a material system of interest for both conventional microelectronic manufacturing, and future quantum electronic devices. Using an in-situ variable spacing microscopic four-probe system, we demonstrate the ability to separate the conductivity of the substrate and the doping layer. We show that the obtained sensitivity to the dopant layer derives from a combination of the nanoscale contacting areas and the conductivity difference between the highly doped 2D layer and the substrate. At an encapsulation depth of only 4 nm, we demonstrate a room temperature resistivity of 1.4k Omega/square. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773485] (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3507059
- author
- Polley, Craig M. ; Clarke, Warrick R. ; Miwa, Jill A. ; Simmons, Michelle Y. and Wells, Justin LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 101
- issue
- 26
- article number
- 262105
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000312830700033
- scopus:84871758072
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4773485
- language
- English
- LU publication?
- yes
- id
- 4134c01f-2888-487d-b0ef-990d03b43f88 (old id 3507059)
- date added to LUP
- 2016-04-01 10:04:48
- date last changed
- 2022-03-12 01:54:20
@article{4134c01f-2888-487d-b0ef-990d03b43f88,
abstract = {{We present room temperature resistivity measurements of shallow, monolayer doped phosphorus in silicon, a material system of interest for both conventional microelectronic manufacturing, and future quantum electronic devices. Using an in-situ variable spacing microscopic four-probe system, we demonstrate the ability to separate the conductivity of the substrate and the doping layer. We show that the obtained sensitivity to the dopant layer derives from a combination of the nanoscale contacting areas and the conductivity difference between the highly doped 2D layer and the substrate. At an encapsulation depth of only 4 nm, we demonstrate a room temperature resistivity of 1.4k Omega/square. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773485]}},
author = {{Polley, Craig M. and Clarke, Warrick R. and Miwa, Jill A. and Simmons, Michelle Y. and Wells, Justin}},
issn = {{0003-6951}},
language = {{eng}},
number = {{26}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon}},
url = {{http://dx.doi.org/10.1063/1.4773485}},
doi = {{10.1063/1.4773485}},
volume = {{101}},
year = {{2012}},
}