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Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon

Polley, Craig M.; Clarke, Warrick R.; Miwa, Jill A.; Simmons, Michelle Y. and Wells, Justin LU (2012) In Applied Physics Letters 101(26).
Abstract
We present room temperature resistivity measurements of shallow, monolayer doped phosphorus in silicon, a material system of interest for both conventional microelectronic manufacturing, and future quantum electronic devices. Using an in-situ variable spacing microscopic four-probe system, we demonstrate the ability to separate the conductivity of the substrate and the doping layer. We show that the obtained sensitivity to the dopant layer derives from a combination of the nanoscale contacting areas and the conductivity difference between the highly doped 2D layer and the substrate. At an encapsulation depth of only 4 nm, we demonstrate a room temperature resistivity of 1.4k Omega/square. (C) 2012 American Institute of Physics.... (More)
We present room temperature resistivity measurements of shallow, monolayer doped phosphorus in silicon, a material system of interest for both conventional microelectronic manufacturing, and future quantum electronic devices. Using an in-situ variable spacing microscopic four-probe system, we demonstrate the ability to separate the conductivity of the substrate and the doping layer. We show that the obtained sensitivity to the dopant layer derives from a combination of the nanoscale contacting areas and the conductivity difference between the highly doped 2D layer and the substrate. At an encapsulation depth of only 4 nm, we demonstrate a room temperature resistivity of 1.4k Omega/square. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773485] (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
101
issue
26
publisher
American Institute of Physics
external identifiers
  • wos:000312830700033
  • scopus:84871758072
ISSN
0003-6951
DOI
10.1063/1.4773485
language
English
LU publication?
yes
id
4134c01f-2888-487d-b0ef-990d03b43f88 (old id 3507059)
date added to LUP
2013-02-21 12:23:19
date last changed
2017-10-01 03:06:44
@article{4134c01f-2888-487d-b0ef-990d03b43f88,
  abstract     = {We present room temperature resistivity measurements of shallow, monolayer doped phosphorus in silicon, a material system of interest for both conventional microelectronic manufacturing, and future quantum electronic devices. Using an in-situ variable spacing microscopic four-probe system, we demonstrate the ability to separate the conductivity of the substrate and the doping layer. We show that the obtained sensitivity to the dopant layer derives from a combination of the nanoscale contacting areas and the conductivity difference between the highly doped 2D layer and the substrate. At an encapsulation depth of only 4 nm, we demonstrate a room temperature resistivity of 1.4k Omega/square. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773485]},
  articleno    = {262105},
  author       = {Polley, Craig M. and Clarke, Warrick R. and Miwa, Jill A. and Simmons, Michelle Y. and Wells, Justin},
  issn         = {0003-6951},
  language     = {eng},
  number       = {26},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon},
  url          = {http://dx.doi.org/10.1063/1.4773485},
  volume       = {101},
  year         = {2012},
}