Photodoping of graphene/silicon van der Waals heterostructure observed by terahertz emission spectroscopy
(2020) In Applied Physics Letters 117(8).- Abstract
Photodoping as a nonvolatile and reversible method can be used to modify the carrier distribution at the heterojunction interface. Herein, we explore the 2D/3D van der Waals (vdW) graphene/silicon (G/Si) heterostructure in real time by terahertz (THz) emission spectroscopy. Photoinduced doping is introduced by a continuous wave laser, which leads to a screening effect to the built-in electric field at the interface. The resulting decrease in transient photocurrent reduces the THz emission amplitude from the G/Si heterostructure. The photoinduced doping effect suggests a 40% THz intrinsic modulation depth at external reverse bias. This work provides an effective way to actively control the THz emission process from the G/Si interface and... (More)
Photodoping as a nonvolatile and reversible method can be used to modify the carrier distribution at the heterojunction interface. Herein, we explore the 2D/3D van der Waals (vdW) graphene/silicon (G/Si) heterostructure in real time by terahertz (THz) emission spectroscopy. Photoinduced doping is introduced by a continuous wave laser, which leads to a screening effect to the built-in electric field at the interface. The resulting decrease in transient photocurrent reduces the THz emission amplitude from the G/Si heterostructure. The photoinduced doping effect suggests a 40% THz intrinsic modulation depth at external reverse bias. This work provides an effective way to actively control the THz emission process from the G/Si interface and paves the way for analyzing the interfacial process under photoinduced doping in vdW heterostructures.
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- author
- Du, Wanyi ; Yao, Zehan LU ; Zhu, Lipeng ; Huang, Yuanyuan ; Lei, Zhen ; Xi, Fugang ; Jin, Yanping and Xu, Xinlong
- organization
- publishing date
- 2020-08-24
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 117
- issue
- 8
- article number
- 081106
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85090401524
- ISSN
- 0003-6951
- DOI
- 10.1063/5.0020068
- language
- English
- LU publication?
- yes
- id
- 357b3161-bc50-4cf4-875c-bd2849cbd9b4
- date added to LUP
- 2020-10-21 14:29:34
- date last changed
- 2022-04-19 01:11:04
@article{357b3161-bc50-4cf4-875c-bd2849cbd9b4, abstract = {{<p>Photodoping as a nonvolatile and reversible method can be used to modify the carrier distribution at the heterojunction interface. Herein, we explore the 2D/3D van der Waals (vdW) graphene/silicon (G/Si) heterostructure in real time by terahertz (THz) emission spectroscopy. Photoinduced doping is introduced by a continuous wave laser, which leads to a screening effect to the built-in electric field at the interface. The resulting decrease in transient photocurrent reduces the THz emission amplitude from the G/Si heterostructure. The photoinduced doping effect suggests a 40% THz intrinsic modulation depth at external reverse bias. This work provides an effective way to actively control the THz emission process from the G/Si interface and paves the way for analyzing the interfacial process under photoinduced doping in vdW heterostructures.</p>}}, author = {{Du, Wanyi and Yao, Zehan and Zhu, Lipeng and Huang, Yuanyuan and Lei, Zhen and Xi, Fugang and Jin, Yanping and Xu, Xinlong}}, issn = {{0003-6951}}, language = {{eng}}, month = {{08}}, number = {{8}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Photodoping of graphene/silicon van der Waals heterostructure observed by terahertz emission spectroscopy}}, url = {{http://dx.doi.org/10.1063/5.0020068}}, doi = {{10.1063/5.0020068}}, volume = {{117}}, year = {{2020}}, }