Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Photodoping of graphene/silicon van der Waals heterostructure observed by terahertz emission spectroscopy

Du, Wanyi ; Yao, Zehan LU ; Zhu, Lipeng ; Huang, Yuanyuan ; Lei, Zhen ; Xi, Fugang ; Jin, Yanping and Xu, Xinlong (2020) In Applied Physics Letters 117(8).
Abstract

Photodoping as a nonvolatile and reversible method can be used to modify the carrier distribution at the heterojunction interface. Herein, we explore the 2D/3D van der Waals (vdW) graphene/silicon (G/Si) heterostructure in real time by terahertz (THz) emission spectroscopy. Photoinduced doping is introduced by a continuous wave laser, which leads to a screening effect to the built-in electric field at the interface. The resulting decrease in transient photocurrent reduces the THz emission amplitude from the G/Si heterostructure. The photoinduced doping effect suggests a 40% THz intrinsic modulation depth at external reverse bias. This work provides an effective way to actively control the THz emission process from the G/Si interface and... (More)

Photodoping as a nonvolatile and reversible method can be used to modify the carrier distribution at the heterojunction interface. Herein, we explore the 2D/3D van der Waals (vdW) graphene/silicon (G/Si) heterostructure in real time by terahertz (THz) emission spectroscopy. Photoinduced doping is introduced by a continuous wave laser, which leads to a screening effect to the built-in electric field at the interface. The resulting decrease in transient photocurrent reduces the THz emission amplitude from the G/Si heterostructure. The photoinduced doping effect suggests a 40% THz intrinsic modulation depth at external reverse bias. This work provides an effective way to actively control the THz emission process from the G/Si interface and paves the way for analyzing the interfacial process under photoinduced doping in vdW heterostructures.

(Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
117
issue
8
article number
081106
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85090401524
ISSN
0003-6951
DOI
10.1063/5.0020068
language
English
LU publication?
yes
id
357b3161-bc50-4cf4-875c-bd2849cbd9b4
date added to LUP
2020-10-21 14:29:34
date last changed
2022-04-19 01:11:04
@article{357b3161-bc50-4cf4-875c-bd2849cbd9b4,
  abstract     = {{<p>Photodoping as a nonvolatile and reversible method can be used to modify the carrier distribution at the heterojunction interface. Herein, we explore the 2D/3D van der Waals (vdW) graphene/silicon (G/Si) heterostructure in real time by terahertz (THz) emission spectroscopy. Photoinduced doping is introduced by a continuous wave laser, which leads to a screening effect to the built-in electric field at the interface. The resulting decrease in transient photocurrent reduces the THz emission amplitude from the G/Si heterostructure. The photoinduced doping effect suggests a 40% THz intrinsic modulation depth at external reverse bias. This work provides an effective way to actively control the THz emission process from the G/Si interface and paves the way for analyzing the interfacial process under photoinduced doping in vdW heterostructures.</p>}},
  author       = {{Du, Wanyi and Yao, Zehan and Zhu, Lipeng and Huang, Yuanyuan and Lei, Zhen and Xi, Fugang and Jin, Yanping and Xu, Xinlong}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  month        = {{08}},
  number       = {{8}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Photodoping of graphene/silicon van der Waals heterostructure observed by terahertz emission spectroscopy}},
  url          = {{http://dx.doi.org/10.1063/5.0020068}},
  doi          = {{10.1063/5.0020068}},
  volume       = {{117}},
  year         = {{2020}},
}