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High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

Boland, Jessica L ; Amaduzzi, Francesca ; Sterzl, Sabrina ; Potts, Heidi LU ; Herz, Laura M ; Fontcuberta I Morral, Anna and Johnston, Michael B (2018) In Nano Letters 18(6). p.3703-3710
Abstract

InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V-1 s-1 at 10 K.

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author
publishing date
type
Contribution to journal
publication status
published
in
Nano Letters
volume
18
issue
6
pages
8 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:29717874
  • scopus:85046683699
ISSN
1530-6992
DOI
10.1021/acs.nanolett.8b00842
language
English
LU publication?
no
id
35932409-7864-4eb1-857e-3adf89a0041e
date added to LUP
2019-05-15 09:50:36
date last changed
2020-02-19 05:28:43
@article{35932409-7864-4eb1-857e-3adf89a0041e,
  abstract     = {<p>InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V-1 s-1 at 10 K.</p>},
  author       = {Boland, Jessica L and Amaduzzi, Francesca and Sterzl, Sabrina and Potts, Heidi and Herz, Laura M and Fontcuberta I Morral, Anna and Johnston, Michael B},
  issn         = {1530-6992},
  language     = {eng},
  month        = {06},
  number       = {6},
  pages        = {3703--3710},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Nano Letters},
  title        = {High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.8b00842},
  doi          = {10.1021/acs.nanolett.8b00842},
  volume       = {18},
  year         = {2018},
}