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Scattering-assisted terahertz gain in semiconductor superlattices in the Wannier-Stark-Ladder regime

Tarakanov, Yu. A. ; Odnoblyudov, M. A. ; Chao, Koung-An LU ; Sekine, N. and Hirakawa, K. (2006) In Physical Review B (Condensed Matter and Materials Physics) 74(12).
Abstract
Using the second-order perturbation theory we have calculated the scattering assisted gain spectra in GaAs/AlGaAs superlattice under a strong applied electric field in the Wannier-Stark-Ladder (WSL) regime. Nonequilibrium distribution function of quasi-two-dimensional carriers localized in each WSL level and indirect optical transitions between neighboring WSL levels accompanied by the emission or absorption of acoustical phonons are taken into account in our theoretical analysis and numerical calculation. We have shown that the experimentally observed down shift of the zero-gain frequency from the Bloch oscillation frequency is due to the inelastic nature of the phonon scattering and the formation of excitons when electron-hole pairs are... (More)
Using the second-order perturbation theory we have calculated the scattering assisted gain spectra in GaAs/AlGaAs superlattice under a strong applied electric field in the Wannier-Stark-Ladder (WSL) regime. Nonequilibrium distribution function of quasi-two-dimensional carriers localized in each WSL level and indirect optical transitions between neighboring WSL levels accompanied by the emission or absorption of acoustical phonons are taken into account in our theoretical analysis and numerical calculation. We have shown that the experimentally observed down shift of the zero-gain frequency from the Bloch oscillation frequency is due to the inelastic nature of the phonon scattering and the formation of excitons when electron-hole pairs are photoexcited. Our theoretical results agree well with the experimental data which were obtained from analyzing the THz response of superlattices to the picosecond optical pulse excitation. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
74
issue
12
publisher
American Physical Society
external identifiers
  • wos:000240872500070
  • scopus:33749240204
ISSN
1098-0121
DOI
10.1103/PhysRevB.74.125321
language
English
LU publication?
yes
id
f9bc88d6-3330-4c3d-bb2d-04e39a26d716 (old id 389434)
date added to LUP
2016-04-01 16:51:54
date last changed
2021-09-22 01:40:35
@article{f9bc88d6-3330-4c3d-bb2d-04e39a26d716,
  abstract     = {Using the second-order perturbation theory we have calculated the scattering assisted gain spectra in GaAs/AlGaAs superlattice under a strong applied electric field in the Wannier-Stark-Ladder (WSL) regime. Nonequilibrium distribution function of quasi-two-dimensional carriers localized in each WSL level and indirect optical transitions between neighboring WSL levels accompanied by the emission or absorption of acoustical phonons are taken into account in our theoretical analysis and numerical calculation. We have shown that the experimentally observed down shift of the zero-gain frequency from the Bloch oscillation frequency is due to the inelastic nature of the phonon scattering and the formation of excitons when electron-hole pairs are photoexcited. Our theoretical results agree well with the experimental data which were obtained from analyzing the THz response of superlattices to the picosecond optical pulse excitation.},
  author       = {Tarakanov, Yu. A. and Odnoblyudov, M. A. and Chao, Koung-An and Sekine, N. and Hirakawa, K.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {12},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Scattering-assisted terahertz gain in semiconductor superlattices in the Wannier-Stark-Ladder regime},
  url          = {http://dx.doi.org/10.1103/PhysRevB.74.125321},
  doi          = {10.1103/PhysRevB.74.125321},
  volume       = {74},
  year         = {2006},
}