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A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure

Ouattara, Lassana LU ; Mikkelsen, Anders LU ; Lundgren, Edvin LU ; Hoglund, L. ; Asplund, C. and Andersson, J. Y. (2006) In Applied Physics Reviews 100(4).
Abstract
We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated. (c) 2006 American Institute of Physics.
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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
100
issue
4
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000240236800118
  • scopus:33748331440
ISSN
1931-9401
DOI
10.1063/1.2245195
language
English
LU publication?
yes
id
f3afce8e-fcb6-4f81-9fd0-63c021e4959c (old id 394747)
date added to LUP
2016-04-01 11:34:39
date last changed
2022-01-26 07:15:05
@article{f3afce8e-fcb6-4f81-9fd0-63c021e4959c,
  abstract     = {{We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated. (c) 2006 American Institute of Physics.}},
  author       = {{Ouattara, Lassana and Mikkelsen, Anders and Lundgren, Edvin and Hoglund, L. and Asplund, C. and Andersson, J. Y.}},
  issn         = {{1931-9401}},
  language     = {{eng}},
  number       = {{4}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Reviews}},
  title        = {{A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure}},
  url          = {{http://dx.doi.org/10.1063/1.2245195}},
  doi          = {{10.1063/1.2245195}},
  volume       = {{100}},
  year         = {{2006}},
}