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Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Kivisaari, Pyry LU ; Sadi, Toufik; Li, Jingrui; Georgiev, Vihar; Oksanen, Jani; Rinke, Patrick and Tulkki, Jukka (2015) 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 In 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 p.393-396
Abstract

We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the... (More)

We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

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type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
pages
4 pages
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
external identifiers
  • scopus:84959337323
DOI
10.1109/SISPAD.2015.7292342
language
English
LU publication?
yes
id
3b7a0742-db9c-4521-881f-e32a69c2f461
date added to LUP
2016-09-23 08:13:00
date last changed
2017-01-01 08:34:54
@inproceedings{3b7a0742-db9c-4521-881f-e32a69c2f461,
  abstract     = {<p>We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.</p>},
  author       = {Kivisaari, Pyry and Sadi, Toufik and Li, Jingrui and Georgiev, Vihar and Oksanen, Jani and Rinke, Patrick and Tulkki, Jukka},
  booktitle    = {2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015},
  language     = {eng},
  month        = {10},
  pages        = {393--396},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {Bipolar Monte Carlo simulation of hot carriers in III-N LEDs},
  url          = {http://dx.doi.org/10.1109/SISPAD.2015.7292342},
  year         = {2015},
}