The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire
(2021) In Nano Energy 87.- Abstract
Understanding piezotronic correlated carrier recombination behavior in quantum wells is essential for their applications. In this work, we have studied the influence of piezotronics on carrier recombination processes in single InGaN/GaN multiple quantum wells microwire (MQW-MW) by using steady-state and time-resolved spectroscopies. We conclude that mechanical strain induced piezotronics promotes the charge separation of excitons in space, and slows down the recombination rate of free carriers. The proposed model is supported by three independent experiments: photoluminescence experiment of MQW-MW before and after peel off, strain dependent TRPL experiment, and excitation fluency dependent PL intensity experiment. Our study could... (More)
Understanding piezotronic correlated carrier recombination behavior in quantum wells is essential for their applications. In this work, we have studied the influence of piezotronics on carrier recombination processes in single InGaN/GaN multiple quantum wells microwire (MQW-MW) by using steady-state and time-resolved spectroscopies. We conclude that mechanical strain induced piezotronics promotes the charge separation of excitons in space, and slows down the recombination rate of free carriers. The proposed model is supported by three independent experiments: photoluminescence experiment of MQW-MW before and after peel off, strain dependent TRPL experiment, and excitation fluency dependent PL intensity experiment. Our study could provide a guideline for the application of piezotronic in MQW-MW-based optoelectronic devices.
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- author
- Zou, Xianshao LU ; Dong, Jianqi ; Zhang, Kang ; Lin, Weihua LU ; Guo, Meiyuan LU ; Zhang, Wei LU and Wang, Xingfu
- organization
- publishing date
- 2021-09-01
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Carrier dynamics, Charge trapping, InGaN/GaN MQWs, Microwires, Piezotronic effect, Time-resolved spectroscopy
- in
- Nano Energy
- volume
- 87
- article number
- 106145
- publisher
- Elsevier
- external identifiers
-
- scopus:85106462738
- ISSN
- 2211-2855
- DOI
- 10.1016/j.nanoen.2021.106145
- language
- English
- LU publication?
- yes
- id
- 3bff5757-4381-4d63-b1f6-2267d91ca260
- date added to LUP
- 2021-06-14 14:28:48
- date last changed
- 2023-11-08 15:30:34
@article{3bff5757-4381-4d63-b1f6-2267d91ca260,
abstract = {{<p>Understanding piezotronic correlated carrier recombination behavior in quantum wells is essential for their applications. In this work, we have studied the influence of piezotronics on carrier recombination processes in single InGaN/GaN multiple quantum wells microwire (MQW-MW) by using steady-state and time-resolved spectroscopies. We conclude that mechanical strain induced piezotronics promotes the charge separation of excitons in space, and slows down the recombination rate of free carriers. The proposed model is supported by three independent experiments: photoluminescence experiment of MQW-MW before and after peel off, strain dependent TRPL experiment, and excitation fluency dependent PL intensity experiment. Our study could provide a guideline for the application of piezotronic in MQW-MW-based optoelectronic devices.</p>}},
author = {{Zou, Xianshao and Dong, Jianqi and Zhang, Kang and Lin, Weihua and Guo, Meiyuan and Zhang, Wei and Wang, Xingfu}},
issn = {{2211-2855}},
keywords = {{Carrier dynamics; Charge trapping; InGaN/GaN MQWs; Microwires; Piezotronic effect; Time-resolved spectroscopy}},
language = {{eng}},
month = {{09}},
publisher = {{Elsevier}},
series = {{Nano Energy}},
title = {{The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire}},
url = {{http://dx.doi.org/10.1016/j.nanoen.2021.106145}},
doi = {{10.1016/j.nanoen.2021.106145}},
volume = {{87}},
year = {{2021}},
}