Advanced

Electrons, holes, and the hall effect in amorphous silicon

Hobbs, David LU (1993) In Journal of Non-Crystalline Solids 164-166. p.457-460
Abstract
The double sign anomaly in hydrogenated amorphous silicon, observed by LeComber et.al. [1] in 1977, has remained puzzling ever since. Recently we attacked this problem from two different directions using the equation-of-motion method. Calculations reproduce the double sign anomaly and were rationalised in terms of the behaviour of the spectral function. In a new type of calculation the motion of a ‘wave packet’ was studied in an applied field. Behaviour characteristics of positive and negative effective masses was found in the same ranges of energy for crystalline and a-Si. A perturbation theory is given for reconciling these results.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
in
Journal of Non-Crystalline Solids
volume
164-166
pages
457 - 460
publisher
Elsevier
external identifiers
  • scopus:0027907079
ISSN
0022-3093
language
English
LU publication?
yes
id
3d5db128-730f-428e-ac4f-b0702457361e
date added to LUP
2016-09-09 16:32:08
date last changed
2017-01-17 13:33:11
@article{3d5db128-730f-428e-ac4f-b0702457361e,
  abstract     = {The double sign anomaly in hydrogenated amorphous silicon, observed by LeComber et.al. [1] in 1977, has remained puzzling ever since. Recently we attacked this problem from two different directions using the equation-of-motion method. Calculations reproduce the double sign anomaly and were rationalised in terms of the behaviour of the spectral function. In a new type of calculation the motion of a ‘wave packet’ was studied in an applied field. Behaviour characteristics of positive and negative effective masses was found in the same ranges of energy for crystalline and a-Si. A perturbation theory is given for reconciling these results.},
  articleno    = {164-166},
  author       = {Hobbs, David},
  issn         = {0022-3093},
  language     = {eng},
  pages        = {457--460},
  publisher    = {Elsevier},
  series       = {Journal of Non-Crystalline Solids},
  title        = {Electrons, holes, and the hall effect in amorphous silicon},
  volume       = {164-166},
  year         = {1993},
}