Electrons, holes, and the hall effect in amorphous silicon
Hobbs, David LU
(1993)
In Journal of Non-Crystalline Solids
164-166.
p.457-460
- Abstract
- The double sign anomaly in hydrogenated amorphous silicon, observed by LeComber et.al. [1] in 1977, has remained puzzling ever since. Recently we attacked this problem from two different directions using the equation-of-motion method. Calculations reproduce the double sign anomaly and were rationalised in terms of the behaviour of the spectral function. In a new type of calculation the motion of a ‘wave packet’ was studied in an applied field. Behaviour characteristics of positive and negative effective masses was found in the same ranges of energy for crystalline and a-Si. A perturbation theory is given for reconciling these results.
Please use this url to cite or link to this publication:
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- author
- Hobbs, David
LU
- organization
- publishing date
- 1993-12
- type
- Contribution to journal
- publication status
- published
- in
- Journal of Non-Crystalline Solids
- volume
- 164-166
- article number
- 164-166
- pages
- 457 - 460
- publisher
- Elsevier
- external identifiers
-
- scopus:0027907079
- ISSN
- 0022-3093
- language
- English
- LU publication?
- yes
- id
- 3d5db128-730f-428e-ac4f-b0702457361e
- date added to LUP
- 2016-09-09 16:32:08
- date last changed
- 2024-01-04 12:14:16
@article{3d5db128-730f-428e-ac4f-b0702457361e,
abstract = {{The double sign anomaly in hydrogenated amorphous silicon, observed by LeComber et.al. [1] in 1977, has remained puzzling ever since. Recently we attacked this problem from two different directions using the equation-of-motion method. Calculations reproduce the double sign anomaly and were rationalised in terms of the behaviour of the spectral function. In a new type of calculation the motion of a ‘wave packet’ was studied in an applied field. Behaviour characteristics of positive and negative effective masses was found in the same ranges of energy for crystalline and a-Si. A perturbation theory is given for reconciling these results.}},
author = {{Hobbs, David}},
issn = {{0022-3093}},
language = {{eng}},
pages = {{457--460}},
publisher = {{Elsevier}},
series = {{Journal of Non-Crystalline Solids}},
title = {{Electrons, holes, and the hall effect in amorphous silicon}},
volume = {{164-166}},
year = {{1993}},
}