Measuring residual stresses in individual on-chip interconnects using synchrotron nanodiffraction
(2024) In Applied Physics Letters 124(8).- Abstract
As the dimensions of interconnects in integrated circuits continue to shrink, an urgent need arises to understand the physical mechanism associated with electromigration. Using x-ray nanodiffraction, we analyzed the stresses in Blech-structured pure Cu lines subjected to different electromigration conditions. The results suggest that the measured residual stresses in the early stages of electromigration are related to relaxation of stresses caused by thermal expansion mismatch, while a developing current-induced stress leads to reductions in the residual stress after longer test times. These findings not only validate the feasibility of measuring stress in copper lines using nanodiffraction but also highlight the need for a further... (More)
As the dimensions of interconnects in integrated circuits continue to shrink, an urgent need arises to understand the physical mechanism associated with electromigration. Using x-ray nanodiffraction, we analyzed the stresses in Blech-structured pure Cu lines subjected to different electromigration conditions. The results suggest that the measured residual stresses in the early stages of electromigration are related to relaxation of stresses caused by thermal expansion mismatch, while a developing current-induced stress leads to reductions in the residual stress after longer test times. These findings not only validate the feasibility of measuring stress in copper lines using nanodiffraction but also highlight the need for a further understanding, particularly through in situ electromigration experiments with x-ray nanodiffraction analysis.
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- author
- Zhang, Yaqian ; Du, Leiming ; Bäcke, Olof ; Kalbfleisch, Sebastian LU ; Zhang, Guoqi ; Vollebregt, Sten and Hörnqvist Colliander, Magnus
- organization
- publishing date
- 2024
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 124
- issue
- 8
- article number
- 083501
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85186118384
- ISSN
- 0003-6951
- DOI
- 10.1063/5.0192672
- language
- English
- LU publication?
- yes
- id
- 3f195a2e-f2d8-4035-92aa-5366de24e8a3
- date added to LUP
- 2024-03-26 12:43:58
- date last changed
- 2024-03-26 12:45:08
@article{3f195a2e-f2d8-4035-92aa-5366de24e8a3, abstract = {{<p>As the dimensions of interconnects in integrated circuits continue to shrink, an urgent need arises to understand the physical mechanism associated with electromigration. Using x-ray nanodiffraction, we analyzed the stresses in Blech-structured pure Cu lines subjected to different electromigration conditions. The results suggest that the measured residual stresses in the early stages of electromigration are related to relaxation of stresses caused by thermal expansion mismatch, while a developing current-induced stress leads to reductions in the residual stress after longer test times. These findings not only validate the feasibility of measuring stress in copper lines using nanodiffraction but also highlight the need for a further understanding, particularly through in situ electromigration experiments with x-ray nanodiffraction analysis.</p>}}, author = {{Zhang, Yaqian and Du, Leiming and Bäcke, Olof and Kalbfleisch, Sebastian and Zhang, Guoqi and Vollebregt, Sten and Hörnqvist Colliander, Magnus}}, issn = {{0003-6951}}, language = {{eng}}, number = {{8}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Measuring residual stresses in individual on-chip interconnects using synchrotron nanodiffraction}}, url = {{http://dx.doi.org/10.1063/5.0192672}}, doi = {{10.1063/5.0192672}}, volume = {{124}}, year = {{2024}}, }