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Measuring residual stresses in individual on-chip interconnects using synchrotron nanodiffraction

Zhang, Yaqian ; Du, Leiming ; Bäcke, Olof ; Kalbfleisch, Sebastian LU ; Zhang, Guoqi ; Vollebregt, Sten and Hörnqvist Colliander, Magnus (2024) In Applied Physics Letters 124(8).
Abstract

As the dimensions of interconnects in integrated circuits continue to shrink, an urgent need arises to understand the physical mechanism associated with electromigration. Using x-ray nanodiffraction, we analyzed the stresses in Blech-structured pure Cu lines subjected to different electromigration conditions. The results suggest that the measured residual stresses in the early stages of electromigration are related to relaxation of stresses caused by thermal expansion mismatch, while a developing current-induced stress leads to reductions in the residual stress after longer test times. These findings not only validate the feasibility of measuring stress in copper lines using nanodiffraction but also highlight the need for a further... (More)

As the dimensions of interconnects in integrated circuits continue to shrink, an urgent need arises to understand the physical mechanism associated with electromigration. Using x-ray nanodiffraction, we analyzed the stresses in Blech-structured pure Cu lines subjected to different electromigration conditions. The results suggest that the measured residual stresses in the early stages of electromigration are related to relaxation of stresses caused by thermal expansion mismatch, while a developing current-induced stress leads to reductions in the residual stress after longer test times. These findings not only validate the feasibility of measuring stress in copper lines using nanodiffraction but also highlight the need for a further understanding, particularly through in situ electromigration experiments with x-ray nanodiffraction analysis.

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
124
issue
8
article number
083501
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85186118384
ISSN
0003-6951
DOI
10.1063/5.0192672
language
English
LU publication?
yes
id
3f195a2e-f2d8-4035-92aa-5366de24e8a3
date added to LUP
2024-03-26 12:43:58
date last changed
2024-03-26 12:45:08
@article{3f195a2e-f2d8-4035-92aa-5366de24e8a3,
  abstract     = {{<p>As the dimensions of interconnects in integrated circuits continue to shrink, an urgent need arises to understand the physical mechanism associated with electromigration. Using x-ray nanodiffraction, we analyzed the stresses in Blech-structured pure Cu lines subjected to different electromigration conditions. The results suggest that the measured residual stresses in the early stages of electromigration are related to relaxation of stresses caused by thermal expansion mismatch, while a developing current-induced stress leads to reductions in the residual stress after longer test times. These findings not only validate the feasibility of measuring stress in copper lines using nanodiffraction but also highlight the need for a further understanding, particularly through in situ electromigration experiments with x-ray nanodiffraction analysis.</p>}},
  author       = {{Zhang, Yaqian and Du, Leiming and Bäcke, Olof and Kalbfleisch, Sebastian and Zhang, Guoqi and Vollebregt, Sten and Hörnqvist Colliander, Magnus}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{8}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Measuring residual stresses in individual on-chip interconnects using synchrotron nanodiffraction}},
  url          = {{http://dx.doi.org/10.1063/5.0192672}},
  doi          = {{10.1063/5.0192672}},
  volume       = {{124}},
  year         = {{2024}},
}